SIB411DK datasheet(3/9 Pages) VISHAY

Part #	SIB411DK

Description	P-Channel 20-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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3 / 9 page

Document Number: 74335

S-80515-Rev. C, 10-Mar-08

www.vishay.com

3

Vishay Siliconix

SiB411DK

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

3

6

9

12

15

0.0

0.5

1.0

1.5

2.0

VGS = 5 thru 3 V

VDS - Drain-to-Source Voltage (V)

2.5 V

2 V

1.5 V

0.00

0.05

0.10

0.15

0.20

0369

12

15

VGS = 2.5 V

ID - Drain Current (A)

VGS = 1.8 V

VGS = 4.5 V

0

2

4

6

8

0246

8

10

12

ID = 4.8 A

Qg - Total Gate Charge (nC)

VDS = 10 V

VGS = 16 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0.0

0.4

0.8

1.2

1.6

2.0

0.0

0.3

0.6

0.9

1.2

1.5

TC = 125 °C

- 55 °C

VGS - Gate-to-Source Voltage (V)

25 °C

Crss

0

100

200

300

400

500

600

700

800

04

8

12

16

20

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

VGS = 4.5 V, 2.5 V, 1.8 V

TJ - Junction Temperature (°C)

ID = 3.3 A

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