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SI9936BDY-T1-E3 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI9936BDY-T1-E3 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 9 page Document Number: 72521 S09-0704-Rev. C, 27-Apr-09 www.vishay.com 3 Vishay Siliconix Si9936BDY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.00 0.02 0.04 0.06 0.08 0.10 0 5 10 15 20 25 30 35 40 ID - Drain Current (A) VGS = 10 V VGS = 4.5 V 0 2 4 6 8 10 0 2468 10 VDS = 15 V ID = 6 A Qg - Total Gate Charge (nC) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 40 10 1 VSD - Source-to-Drain Voltage (V) TJ = 25 °C TJ = 150 °C Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 6 A TJ - Junction Temperature (°C) 0.00 0.02 0.04 0.06 0.08 0.10 0 2468 10 ID = 6 A VGS - Gate-to-Source Voltage (V) |
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