SI7129DN-T1-GE3 datasheet(5/13 Pages) VISHAY

Part #	SI7129DN-T1-GE3

Description	P-Channel 30 V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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5 / 13 page

Document Number: 68966

S10-2023-Rev. B, 06-Sep-10

www.vishay.com

5

Vishay Siliconix

Si7129DN

New Product

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

10

20

30

40

50

60

0

25

50

75

100

125

150

TC - CaseTemperature (°C)

Power, Junction-to-Case

0

15

30

45

60

75

0

25

50

75

100

125

150

TC - Case Temperature (ºC)

Power, Junction-to-Ambient

0

0.5

1

1.5

2

0

25

50

75

100

125

150

TA - Ambient Temperature (ºC)

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SI7129DN-T1-GE3 Datasheet(PDF) 5 Page - Vishay Siliconix

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