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K6R4016C1D-J Datasheet(PDF) 3 Page - Samsung semiconductor

Part # K6R4016C1D-J
Description  512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6R4016C1D-J Datasheet(HTML) 3 Page - Samsung semiconductor

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K6R4008V1D
CMOS SRAM
PRELIMINARY
Rev. 2.0
- 3 -
July 2004
512K x 8 Bit High-Speed CMOS Static RAM
GENERAL DESCRIPTION
FEATURES
• Fast Access Time 8,10ns(Max.)
• Low Power Dissipation
Standby (TTL)
: 20mA(Max.)
(CMOS) : 5mA(Max.)
Operating K6R4008V1D-08 : 80mA(Max.)
K6R4008V1D-10 : 65mA(Max.)
• Single 3.3
±0.3V Power Supply
• TTL Compatible Inputs and Outputs
• Fully Static Operation
- No Clock or Refresh required
• Three State Outputs
• Center Power/Ground Pin Configuration
• Standard Pin Configuration
K6R4008V1D-J : 36-SOJ-400
K6R4008V1D-K : 36-SOJ-400(Lead-Free)
K6R4008V1D-T : 44-TSOP2-400BF
K6R4008V1D-U : 44-TSOP2-400BF(Lead-Free)
• Operating in Commercial and Industrial Temperature range.
The K6R4008V1D is a 4,194,304-bit high-speed Static Random
Access Memory organized as 524,288 words by 8 bits. The
K6R4008V1D uses 8 common input and output lines and has an
output enable pin which operates faster than address access
time at read cycle. The device is fabricated using SAMSUNG
′s
advanced CMOS process and designed for high-speed circuit
technology. It is particularly well suited for use in high-density
high-speed system applications. The K6R4008V1D is packaged
in a 400 mil 36-pin plastic SOJ and 44-pin plastic TSOP type II.
Clk Gen.
I/O1~I/O8
CS
WE
OE
FUNCTIONAL BLOCK DIAGRAM
Data
Cont.
Column Select
CLK
Gen.
Pre-Charge Circuit
Memory Array
1024 Rows
512 x 8 Columns
I/O Circuit
A10 A11 A12 A13 A14 A15 A16 A17 A18
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9


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