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SPN2302A Datasheet(PDF) 1 Page - SYNC POWER Crop. |
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SPN2302A Datasheet(HTML) 1 Page - SYNC POWER Crop. |
1 / 8 page 2008/07/20 Ver.2 Page 1 SPN2302A N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN2302A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter FEATURES PIN CONFIGURATION(SOT-23-3L) PART MARKING 20V/4.0A,RDS(ON)=75mΩ@VGS=4.5V 20V/3.4A,RDS(ON)=95mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=135mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design |
Similar Part No. - SPN2302A_08 |
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Similar Description - SPN2302A_08 |
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