2010/05/25

Ver.3

Page 1

SPN1012

N-Channel Enhancement Mode MOSFET

DESCRIPTION

APPLICATIONS

The SPN1012 is the N-Channel enhancement mode

power field effect transistors are produced using high cell

density , DMOS trench technology. This high density

process is especially tailored to minimize on-state

resistance and provide superior switching performance.

These devices are particularly suited for low voltage

applications

such

as

notebook

computer

power

management and other battery powered circuits where

high-side switching , low in-line power loss, and

resistance to transients are needed.

Drivers : Relays/Solenoids/Lamps/Hammers

Power Supply Converter Circuits

Load/Power Switching Cell Phones, Pagers

FEATURES

PIN CONFIGURATION( SOT-523 / SC-89 )

PART MARKING

N-Channel

Super high density cell design for extremely low

RDS (ON)

Exceptional on-resistance and maximum DC

current capability

SOT-523 (SC-89) package design