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SPN1012 Datasheet(PDF) 1 Page - SYNC POWER Crop. |
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SPN1012 Datasheet(HTML) 1 Page - SYNC POWER Crop. |
1 / 9 page 2010/05/25 Ver.3 Page 1 SPN1012 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN1012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. Drivers : Relays/Solenoids/Lamps/Hammers Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers FEATURES PIN CONFIGURATION( SOT-523 / SC-89 ) PART MARKING N-Channel 20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V 20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-523 (SC-89) package design |
Similar Part No. - SPN1012_10 |
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Similar Description - SPN1012_10 |
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