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SPC6602 Datasheet(PDF) 3 Page - SYNC POWER Crop. |
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SPC6602 Datasheet(HTML) 3 Page - SYNC POWER Crop. |
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3 / 11 page  2010/10/28 Ver.5 Page 3 SPC6602 N & P Pair Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25 Unless otherwise noted) ℃ Parameter Symbol Conditions Min. Typ Max. Unit Static VGS=0V,ID= 250uA N-Ch 30 Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=-250uA P-Ch -30 VDS=VGS,ID=250uA N-Ch 1 3 Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250uA P-Ch 1 -3 V VDS=0V,VGS=±20V N-Ch ±100 Gate Leakage Current IGSS VDS=0V,VGS=±20V P-Ch ±100 nA VDS= 24V,VGS=0V N-Ch 1 VDS=-24V,VGS=0V P-Ch -1 VDS= 24V,VGS=0V TJ=55℃ N-Ch 10 Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V TJ=55℃ P-Ch -10 uA VDS≥ 5V,VGS = 10V N-Ch 6 On-State Drain Current ID(on) VDS≤ -5V,VGS =-10V P-Ch -6 A VGS= 10V,ID= 2.8A N-Ch 0.043 0.060 VGS=-10V,ID=-2.8A P-Ch 0.088 0.105 VGS= 4.5V,ID= 2.3A N-Ch 0.056 0.080 Drain-Source On-Resistance RDS(on) VGS=-4.5V,ID=-2.5A P-Ch 0.118 0.135 Ω VDS=4.5V,ID=2.8A N-Ch 4.6 Forward Transconductance gfs VDS=-10V,ID=-2.8A P-Ch 4 S IS= 1.25A,VGS =0V N-Ch 0.8 1.2 Diode Forward Voltage VSD IS=-1.2A,VGS =0V P-Ch -0.8 -1.2 V Dynamic N-Ch 4.5 10 Total Gate Charge Qg P-Ch 5.8 10 N-Ch 0.8 Gate-Source Charge Qgs P-Ch 0.8 N-Ch 1.0 Gate-Drain Charge Qgd N-Channel VDS=15 ,VGS=4.5V , ID≡2.0A P-Channel VDS=-15V ,VGS=-4.5V , ID≡-2.0A P-Ch 1.5 nC N-Ch 8 20 td(on) P-Ch 9 20 N-Ch 12 30 Turn-On Time tr P-Ch 9 20 N-Ch 17 35 td(off) P-Ch 18 35 N-Ch 8 20 Turn-Off Time tf N-Channel VDD=15 , RL=10Ω VGEN=10V , RG=3Ω P-Channel VDD=-15V , RL=15Ω VGEN=-10V , RG=3Ω P-Ch 6 20 nS |
Similar Part No. - SPC6602_10 |
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Similar Description - SPC6602_10 |
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