©2006 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FODMXXX Rev. 1.1.4

2

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be

operable above the recommended operating conditions and stressing the parts to these levels is not recommended.

In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.

The absolute maximum ratings are stress ratings only.

Individual Component Characteristics

Symbol

Parameter

Value

Units

TOTAL PACKAGE

Storage Temperature

-40 to +125

°C

Operating Temperature

-40 to +110

°C

EMITTER

Continuous Forward Current

50

mA

Peak Forward Current (1µs pulse, 300 pps.)

1

A

Reverse Input Voltage

6

V

Power Dissipation

70

mW

Derate linearly (above 25°C)

0.65

mW/°C

DETECTOR

Continuous Collector Current

80

mA

Power Dissipation

150

mW

Derate linearly (above 25°C)

2.0

mW/°C

Collector-Emitter Voltage

FODM2701, FODM2705

40

V

FODM121 Series, FODM124

80

Emitter-Collector Voltage

7

V

Symbol

Parameter

Test Conditions

Device

Min.

Typ.*

Max.

Unit

EMITTER

Forward Voltage

FODM121 Series,

FODM124

1.0

1.3

V

FODM2701

1.4

FODM2705

Reverse Current

FODM2701

5

µA

FODM121 Series

FODM124

DETECTOR

Breakdown Voltage

Collector to Emitter

FODM121 Series,

FODM124

80

V

FODM2701,

FODM2705

40

Emitter to Collector

All

7

V

Collector Dark

Current

All

100

nA

Capacitance

All

10

pF