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FJV42MTF Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FJV42MTF Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FJV42 Rev. A March 2007 FJV42 NPN High Voltage Transistor Absolute Maximum Ratings * T a = 25°C unless otherwise noted * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Electrical Characteristics T C = 25°C unless otherwise noted * Pulse Test: PW ≤300µs, Duty Cycle≤2% Symbol Parameter Value Units VCBO Collector-Base Voltage 350 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 6 V IC Collector Current 500 mA TSTG Storage Temperature Range -55~150 °C PC Collector Power Dissipation 350 mW Symbol Parameter Value Units RTH(j-a) Thermal Resistance, Junction to Ambiet 357 °C/W Symbol Parameter Test Condition MIN MAX Units V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 5.0 mA, IB = 0 350 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 uA, IE = 0 350 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 uA, IC = 0 6 V ICBO Collector-Cutoff Current VCB = 200 V, IE = 0 0.1 uA IEBO Emitter-Cutoff Current VEB = 5.0 V, IC = 0 0.1 uA hFE DC Current Gain * IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V 25 40 40 VCE(sat) Collector-Emitter Saturation Voltage * IC = 20 mA, IB = 2.0 mA 0.5 V VBE(sat) Base-Emitter Breakdown Voltage * IC = 20 mA, IB = 2.0 mA 0.9 V fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 20V, f =100 MHz 50 MHz Ccb Output Capacitance VCB = 20 V, IE = 0, f = 1.0 MHz 3 pF 1. Base 2. Emitter 3. Collector SOT-23 1 2 3 Marking: 1DF |
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