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BD239B Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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BD239B Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 3 page  ©2000 Fairchild Semiconductor International Rev. A, February 2000 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted * Pulse Test: PW=350 µs, duty Cycle≤2.0% Pulsed Symbol Parameter Value Units VCEO Collector-Emitter Voltage : BD239 : BD239A : BD239B : BD239C 45 60 80 100 V V V V VCER Collector-Emitter Voltage : BD239 : BD239A : BD239B : BD239C 55 70 90 115 V V V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 2 A ICP *Collector Current (Pulse) 4 A IB Base Current 0.6 A PC Collector Dissipation (TC=25°C) 30 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) *Collector-Emitter Sustaining Voltage : BD239 : BD239A : BD239B : BD239C IC = 30mA, IB = 0 45 60 80 100 V V V V ICEO Collector Cut-off Current : BD239/A : BD239B/C VCE = 30V, IB = 0 VCE = 60V, IB = 0 0.3 0.3 mA mA ICES Collector Cut-off Current : BD239 : BD239A : BD239B : BD239C VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 100V, VBE = 0 0.2 0.2 0.2 0.2 mA mA mA mA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 1 mA hFE *DC Current Gain VCE = 4V, IC = 0.2A VCE = 4V, IC = 1A 40 15 VCE(sat) *Collector-Emitter Saturation Voltage IC = 1A, IB = 0.2A 0.7 V VBE(on) *Base-Emitter ON Voltage VCE = 4V, IC = 1A 1.3 V BD239/A/B/C Medium Power Linear and Switching Applications • Complement to BD240/A/B/C respectively 1.Base 2.Collector 3.Emitter 1 TO-220 |
Similar Part No. - BD239B |
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Similar Description - BD239B |
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