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ATC800A100JT250XI Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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ATC800A100JT250XI Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers |
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1 / 5 page  ISO 9001 REGISTERED COMPANY ATC 800 A Series NPO Ceramic, High RF Power Ultra-Low ESR Multilayer Capacitors • Case A Size • Capacitance Range (.055" x .055") 0.1 pF to 100 pF • Rugged, reliable • Lowest ESR NPO dielectric • Capable of highest • Case optimized for RF Power highest self resonant • RoHS Compliant/ Lead Free frequency ATC’s 800 A Series offers superb performance in demanding high RF power applications requiring consistent and reliable operation. The combination of highly conductive metal electrode systems, optimized case geometries, and proprietary dielectrics, yields the lowest ESR. ATC’s new NPO low loss rugged dielectrics are designed to provide su- perior heat transfer in high RF power applications. Ultra-low ESR and superior thermal performance insure that the 800 A Series products are your best choice for high RF power applications from UHF through microwave frequencies. Typical applications: UHF and Microwave Communications Systems, Wireless Communications, Public Safety Radio, Telecom, WiMAX, and Satellite Systems. Typical circuit applications: High RF Power Filter Networks, Combiners, Couplers, Matching Networks, Output Coupling, Antenna Coupling, and DC Blocking and Bypassing. ENVIRONMENTAL TESTS ATC 800 A Series Capacitors are designed and manufactured to meet and exceed the requirements of EIA-198, MIL-PRF-55681 and MIL-PRF-123. THERMAL SHOCK: MIL-STD-202, Method 107, Condition A MOISTURE RESISTANCE: MIL-STD-202, Method 106 LOW VOLTAGE HUMIDITY: MIL-STD-202, Method 103, Condition A, with 1.5 Volts DC applied while subjected to an environment of 85°C with 85% relative humid- ity for 240 hours min. LIFE TEST: MIL-STD-202, Method 108, for 2000 hours, at 125°C 200% WVDC applied ELECTRICAL AND MECHANICAL SPECIFICATIONS QUALITY FACTOR (Q): 2000 @ 1 MHz TEMPERATURE COEFFICIENT OF CAPACITANCE (TCC): 0 ±30 PPM/°C (-55°C to +125°C) INSULATION RESISTANCE (IR): 0.1 pF to 100 pF: 105 Megohms min. @ +25°C at rated WVDC 104 Megohms min. @ +125°C at rated WVDC WORKING VOLTAGE (WVDC): See Capacitance Values Table, page 2 DIELECTRIC WITHSTANDING VOLTAGE (DWV): Case A: 250% of rated WVDC for 5 secs. (625 VDC) RETRACE: Less than ±(0.02% or 0.02 pF), whichever is greater AGING EFFECTS: None PIEZOELECTRIC EFFECTS: None (No capacitance variation with voltage or pressure) CAPACITANCE DRIFT: ±(0.02% or 0.02 pF), whichever is greater OPERATING TEMPERATURE RANGE: From -55°C to +125°C (No derating of working voltage) TERMINATION STYLE: RoHS Compliant and Solder Plate See Mechanical Configurations, page 3 TERMINAL STRENGTH: Terminations for chips withstand a pull of 5 lbs. min., 10 lbs. typical, for 5 seconds in direction perpendicular to the termination surface of the capacitor. Test per MIL-STD-202, method 211. ATC # 001-1032 Rev. I, 6/13 |
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