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CBSL30 Datasheet(PDF) 1 Page - Advanced Semiconductor |
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CBSL30 Datasheet(HTML) 1 Page - Advanced Semiconductor |
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1 / 1 page A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice. CHARACTERISTICS T C = 25 OC SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 100 mA 48 55 --- V BVCER IC = 40 mA RBE = 150 Ω 30 40 --- V BVCEO IC = 40 mA 25 28 --- BVEBO IE = 10 mA 3.5 5.0 --- V ICBO VCE = 24 V 10 --- --- mA hFE VCE = 20 V IC = 2.0 A 15 40 100 --- COB VCB = 25 V f = 1.0 MHz 50 pF PG IMD3 VCE = 25 V ICQ = 150 mA f = 860 MHz POUT = 30 W f1 = 860.0 MHz f2 = 860.1 MHz 7.5 -35 --- dB dBc VSWR1 VCE = 25 V VSWR = 20:1 VCE = 25 V ± 20% VSWR = 10:1 No Degradation in Output Device Typ. VSWR2 VCE = 25 V ± 20% VSWR = 5:1 PIN = PIN (norm) +3 dB No Degradation in Output Device Typ. OVD VCE = 25 V PIN (norm) = +5 Db VCE = 25 V ± 20% PIN (norm) = +3 dB No Degradation in Output Device Typ. NPN SILICON RF POWER TRANSISTOR CBSL30 DESCRIPTION: The ASI CBSL30 is Designed for FEATURES: • • • Omnigold™ Metalization System MAXIMUM RATINGS IC 7.5 A VCBO 48V VCEO 25 V VEBO 3.5 V PDISS 88 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +150 OC θθ JC 3.0 OC/W PACKAGE STYLE .230 6L FLG ORDER CODE: ASI10582 MINIMUM inches / mm .115 / 2.92 .225 / 5.72 .075 / 1.91 .090 / 2.29 .720 / 18.29 B C D E F G A MAXIMUM .085 / 2.16 .110 / 2.79 .730 / 18.54 .235 / 5.97 inches / mm .125 / 3.18 H .355 / 9.02 DIM K L I J .004 / 0.10 .120 / 3.05 .230 / 5.84 .006 / 0.15 .130 / 3.30 .260 / 6.60 K 4X .025 R .040x45° .115 I .125 E .430 D H G F J C A B 2XØ.130 L .160 / 4.06 .180 / 4.57 .980 / 24.89 .970 / 24.64 .355 / 9.02 .365 / 9.27 .365 / 9.27 |
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