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TPS54227DRCT Datasheet(PDF) 4 Page - Texas Instruments

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Part # TPS54227DRCT
Description  4.5V to 18V Input, 2-A SYNCHRONOUS STEP DOWN CONVERTER
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TPS54227DRCT Datasheet(HTML) 4 Page - Texas Instruments

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TPS54227
(HSOP8)
PowerPAD
TM
1
2
3
4
8
7
6
5
SW
GND
VBST
VIN
EN
VFB
VREG5
SS
EN
VFB
VREG5
SS
GND
VIN
VIN
VBST
SW
SW
Exposed
Thermal
Die PAD
on
Underside
PGND
1
2
3
4
5
10
9
8
7
6
TPS54227
SLVSAU2B – MAY 2011 – REVISED JUNE 2013
www.ti.com
ELECTRICAL CHARACTERISTICS (continued)
over operating free-air temperature range, VIN = 12 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ON-TIME TIMER CONTROL
tON
On time
VIN = 12 V, VO = 1.05 V
150
ns
tOFF(MIN)
Minimum off time
TA = 25°C, VFB = 0.7 V
260
310
ns
SOFT START
ISSC
SS charge current
VSS = 1V
1.4
2.0
2.6
μA
ISSD
SS discharge current
VSS = 0.5 V
0.1
0.2
mA
UVLO
Wake up VREG5 voltage
3.45
3.75
4.05
UVLO
UVLO threshold
V
Hysteresis VREG5 voltage
0.13
0.32
0.48
DEVICE INFORMATION
DDA PACKAGE
DRC PACKAGE
(TOP VIEW)
(TOP VIEW)
PIN FUNCTIONS
PIN
DESCRIPTION
NAME
DDA
DRC
EN
1
1
Enable input control. EN is active high and must be pulled up to enable the device.
VFB
2
2
Converter feedback input. Connect to output voltage with feedback resistor divider.
5.5 V power supply output. A capacitor (typical 1 µF) should be connected to GND. VREG5 is
VREG5
3
3
not active when EN is low.
SS
4
4
Soft-start control. An external capacitor should be connected to GND.
Ground pin. Power ground return for switching circuit. Connect sensitive SS and VFB returns
GND
5
5
to GND at a single point.
SW
6
6, 7
Switch node connection between high-side NFET and low-side NFET.
Supply input for the high-side FET gate drive circuit. Connect 0.1 µF capacitor between VBST
VBST
7
8
and SW pins. An internal diode is connected between VREG5 and VBST.
VIN
8
9, 10
Input voltage supply pin.
Thermal pad of the package. Must be soldered to achieve appropriate dissipation. Must be
Back side
connected to GND.
Exposed
Thermal Pad
Thermal pad of the package. PGND power ground return of internal low-side FET. Must be
Back side
soldered to achieve appropriate dissipation.
4
Copyright © 2011–2013, Texas Instruments Incorporated
Product Folder Links: TPS54227


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