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IRF6621TR1PBF Datasheet(PDF) 7 Page - International Rectifier

Part # IRF6621TR1PBF
Description  DirectFETPower MOSFET 
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF6621TR1PBF Datasheet(HTML) 7 Page - International Rectifier

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IRF6621PbF
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7
Fig 18.
Diode Reverse Recovery Test Circuit for N-Channel
HEXFET® Power MOSFETs
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤ 5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D =
P.W.
Period
* VGS = 5V for Logic Level Devices
*
Inductor Current
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
• di/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
-
+
+
+
-
-
-
ƒ
„
‚
RG
VDD
D.U.T

DirectFET
™ Substrate and PCB Layout, SQ Outline
(Small Size Can, Q-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and substrate designs.
G = GATE
D = DRAIN
S = SOURCE
DD
D
D
GS


Similar Part No. - IRF6621TR1PBF

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266Kb / 10P
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