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PSMN1R7-60BS Datasheet(PDF) 2 Page - NXP Semiconductors

Part # PSMN1R7-60BS
Description  N-channel 60 V 2 mili ohm standard level MOSFET in D2PAK
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PSMN1R7-60BS Datasheet(HTML) 2 Page - NXP Semiconductors

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PSMN1R7-60BS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 29 February 2012
2 of 14
NXP Semiconductors
PSMN1R7-60BS
N-channel 60 V 2 m
Ω standard level MOSFET in D2PAK
2.
Pinning information
[1]
It is not possible to make connection to pin 2.
3.
Ordering information
4.
Limiting values
[1]
Continuous current is limited by package.
Table 2.
Pinning information
Pin
Symbol
Description
Simplified outline
Graphic symbol
1
G
gate
SOT404 (D2PAK)
2
D
drain[1]
3S
source
mb
D
mounting base;
connected to drain
mb
13
2
S
D
G
mbb076
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PSMN1R7-60BS
D2PAK
plastic single-ended surface-mounted package (D2PAK); 3 leads
(one lead cropped)
SOT404
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 175 °C
-
60
V
VDGR
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS =20kΩ
-60
V
VGS
gate-source voltage
-20
20
V
ID
drain current
VGS =10V; Tmb = 100 °C; see Figure 1
[1] -120
A
VGS =10V; Tmb =25°C; see Figure 1
[1] -120
A
IDM
peak drain current
pulsed; tp ≤ 10 µs; Tmb =25°C; see Figure 3
-
1076 A
Ptot
total power dissipation
Tmb =25°C; see Figure 2
-306
W
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
Tsld(M)
peak soldering temperature
-
260
°C
Source-drain diode
IS
source current
Tmb =25°C
[1] -120
A
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
1076 A
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS =10V; Tj(init) =25°C; ID =120 A; Vsup ≤ 60 V;
RGS =50 Ω; Unclamped
-913
mJ


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