PDTC114E_SER

All information provided in this document is subject to legal disclaimers.

© NXP B.V. 2011. All rights reserved.

Product data sheet

Rev. 12 — 21 December 2011

7 of 17

NXP Semiconductors

PDTC114E series

NPN resistor-equipped transistors; R1 = 10 k

, R2 = 10 k

7.

Characteristics

[1]

Characteristics of built-in transistor.

Table 8.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

collector-base

cut-off current

-

-

100

nA

collector-emitter

cut-off current

-

-

1

A

--

5

A

emitter-base

cut-off current

-

-

400

A

DC current gain

30

-

-

collector-emitter

saturation voltage

-

-

150

mV

off-state input

voltage

1.1

0.8

V

on-state input

voltage

2.5

1.8

-

V

R1

bias resistor 1 (input)

7

10

13

k



R2/R1

bias resistor ratio

0.8

1.0

1.2

f= 1MHz

--

2.5

pF

transition frequency

f = 100 MHz

[1] -

230

-

MHz