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PDTC114EU Datasheet(PDF) 7 Page - NXP Semiconductors |
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PDTC114EU Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 17 page PDTC114E_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 12 — 21 December 2011 7 of 17 NXP Semiconductors PDTC114E series NPN resistor-equipped transistors; R1 = 10 k , R2 = 10 k 7. Characteristics [1] Characteristics of built-in transistor. Table 8. Characteristics Tamb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB =50V; IE = 0 A - - 100 nA ICEO collector-emitter cut-off current VCE =30V; IB =0A - - 1 A VCE =30V; IB =0A; Tj = 150 C -- 5 A IEBO emitter-base cut-off current VEB =5V; IC =0A - - 400 A hFE DC current gain VCE =5V; IC =5mA 30 - - VCEsat collector-emitter saturation voltage IC =10mA; IB =0.5 mA - - 150 mV VI(off) off-state input voltage VCE =5V; IC =100 A- 1.1 0.8 V VI(on) on-state input voltage VCE = 0.3 V; IC =10mA 2.5 1.8 - V R1 bias resistor 1 (input) 7 10 13 k R2/R1 bias resistor ratio 0.8 1.0 1.2 Cc collector capacitance VCB =10V; IE =ie =0 A; f= 1MHz -- 2.5 pF fT transition frequency VCE =5V; IC =10 mA; f = 100 MHz [1] - 230 - MHz |
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