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IRFBF30 Datasheet(PDF) 2 Page - Vishay Siliconix |
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IRFBF30 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com Document Number: 91122 2 S11-0516-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBF30, SiHFBF30 Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -62 °C/W Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC -1.0 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 900 - - V VDS Temperature Coefficient V DS/TJ Reference to 25 °C, ID = 1 mA - 1.1 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 900 V, VGS = 0 V - - 100 μA VDS = 720 V, VGS = 0 V, TJ = 125 °C - - 500 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 2.2 Ab -- 3.7 Forward Transconductance gfs VDS = 100 V, ID = 2.2 Ab 2.3 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 1200 - pF Output Capacitance Coss - 320 - Reverse Transfer Capacitance Crss - 200 - Total Gate Charge Qg VGS = 10 V ID = 3.6 A, VDS = 360 V, see fig. 6 and 13b -- 78 nC Gate-Source Charge Qgs -- 10 Gate-Drain Charge Qgd -- 42 Turn-On Delay Time td(on) VDD = 450 V, ID = 3.6 A, Rg = 12 , RD = 120 , see fig. 10b -14 - ns Rise Time tr -25 - Turn-Off Delay Time td(off) -90 - Fall Time tf -30 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.5 - nH Internal Source Inductance LS -7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 3.6 A Pulsed Diode Forward Currenta ISM -- 14 Body Diode Voltage VSD TJ = 25 °C, IS = 3.6 A, VGS = 0 Vb -- 1.8 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 3.6 A, dI/dt = 100 A/μsb - 430 650 ns Body Diode Reverse Recovery Charge Qrr -1.4 2.1 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G |
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