STANDARD

MICROCIRCUIT DRAWING

SIZE

A

5962-95630

DLA LAND AND MARITIME

COLUMBUS, OHIO 43218-3990

REVISION LEVEL

N

SHEET

4

DSCC FORM 2234

APR 97

1.4 Recommended operating conditions.

Positive supply voltage (V+):

Device types 01, 02, and 04 .................................................................................. +15 V

Device types 03 and 05 ......................................................................................... +12 V

±10%

Negative supply voltage (V-):

Device types 01, 02, and 04 .................................................................................. -15 V

Device types 03 and 05 ......................................................................................... -12 V

±10%

1.5 Radiation features.

Maximum total dose available: high dose rate tests - dose rate = 50 – 300 rad(Si)/s

Device classes Q and V:

Device type 01 ................................................................................................... 200 krads(Si)

Device types 02, 03, 04 and 05 .......................................................................... 300 krads(Si)

Device class T:

Device type 02 ................................................................................................... 100 krads(Si)

ELDRS test (Low dose rate < 10 mrad(Si)/s:

Device class V:

Device types 02 and 03 ......................................................................................... Not production tested 3/

Device types 04 and 05 .......................................................................................... 50 krads(Si) 3/ 4/

Single event phenomena (SEP) :

No SEL occurs at effective linear energy threshold (LET):

Device type 01 ...................................................................................................

≤110 MeV/cm

2

/mg 5/

Device types 02, 03, 04, and 05 ......................................................................... Latch up free 5/

Dose rate induced latch up:

Device type 01 ....................................................................................................... None 6/

Device types 02, 03, 04, and 05 ............................................................................ Not tested

Dose rate upset:

Device type 01 .......................................................................................................

≥1 x 10

8

rads(Si)/s

Device types 02, 03, 04, and 05 ............................................................................ Not tested

For device types 02, 03, 04 and 05, the manufacturer supplying RHA parts on this drawing has performed characterization

testing to a level of 150 krad(Si) that demonstrates the parts do not exhibit enhanced low dose rate sensitivity (ELDRS)

according to MIL-STD-883 method 1019 paragraph 3.13.1.1. Therefore, this part may be considered ELDRS free. Testing

beyond 150 krads(Si) was not performed.

______

3/

For device types 02, 03, 04 and 05, the manufacturer supplying RHA parts on this drawing has performed characterization

testing to a level of 150 krad(Si) at low and high dose rate in accordance with MIL-STD-883 method 1019 paragraph

3.13.1.1. Therefore, this part may be considered ELDRS free. Testing beyond 150 krads(Si) was not performed.

4/

Devices 04 and 05 are production lot acceptance tested on a wafer by wafer basis to 50 krads(Si) at low dose

rate (< 10 mrad(Si)/s).

5/

Device type 01 uses dielectrically isolated (DI) / CMOS technology and latch-up is physically not possible.

Device types 02, 03, 04, and 05 use dielectrically isolated (DI) technology and latch-up is physically not possible.

6/

Guaranteed by process design, but not tested, unless specified in table IA herein.