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SST39VF801C-70-4I-MAKE Datasheet(PDF) 1 Page - Silicon Storage Technology, Inc |
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SST39VF801C-70-4I-MAKE Datasheet(HTML) 1 Page - Silicon Storage Technology, Inc |
1 / 38 page A Microchip Technology Company ©2011 Silicon Storage Technology, Inc. DS25041A 05/11 Data Sheet www.microchip.com 8 Mbit (x16) Multi-Purpose Flash Plus SST39VF801C / SST39VF802C / SST39LF801C / SST39LF802C Features • Organized as 512K x16 • Single Voltage Read and Write Operations – 2.7-3.6V for SST39VF801C/802C – 3.0-3.6V for SST39LF801C/802C • Superior Reliability – Endurance: 100,000 Cycles (Typical) – Greater than 100 years Data Retention • Low Power Consumption (typical values at 5 MHz) – Active Current: 5 mA (typical) – Standby Current: 3 µA (typical) – Auto Low Power Mode: 3 µA (typical) • Hardware Block-Protection/WP# Input Pin – Top Block-Protection (top 8 KWord) – Bottom Block-Protection (bottom 8 KWord) • Sector-Erase Capability – Uniform 2 KWord sectors • Block-Erase Capability – Flexible block architecture; one 8-, two 4-, one 16-, and fifteen 32-KWord blocks • Chip-Erase Capability • Erase-Suspend/Erase-Resume Capabilities • Hardware Reset Pin (RST#) • Latched Address and Data • Security-ID Feature – SST: 128 bits; User: 128 words • Fast Read Access Time: – 70 ns for SST39VF801C/802C – 55 ns for SST39LF801C/802C • Fast Erase and Word-Program: – Sector-Erase Time: 18 ms (typical) – Block-Erase Time: 18 ms (typical) – Chip-Erase Time: 40 ms (typical) – Word-Program Time: 7 µs (typical) • Automatic Write Timing – Internal VPP Generation • End-of-Write Detection – Toggle Bits – Data# Polling – Ready/Busy# Pin • CMOS I/O Compatibility • JEDEC Standard – Flash EEPROM Pinouts and command sets • Packages Available – 48-lead TSOP (12mm x 20mm) – 48-ball TFBGA (6mm x 8mm) – 48-ball WFBGA (4mm x 6mm) • All devices are RoHS compliant The SST39VF801C / SST39VF802C / SST39LF801C / SST39LF802C are 512K x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash® technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability com- pared with alternate approaches. The SST39VF801C / SST39VF802C / SST39LF801C / SST39LF802C write (Program or Erase) with a 2.7-3.6V power supply. These devices conforms to JEDEC standard pinouts for x16 memories. |
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