BC847BS datasheet(5/12 Pages) NXP

Part #	BC847BS

Description	45 V, 100 mA NPN/NPN general-purpose transistor

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Manufacturer	NXP [NXP Semiconductors]

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BC847BS_3

Product data sheet

Rev. 03 — 18 February 2009

5 of 12

NXP Semiconductors

BC847BS

45 V, 100 mA NPN/NPN general-purpose transistor

7.

Characteristics

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

FR4 PCB, mounting pad for collector 1 cm2

Fig 3.

Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;

typical values

006aab421

10−5

10

10−2

10−4

102

10−1

tp (s)

10−3

103

1

102

10

103

Zth(j-a)

(K/W)

1

δ = 1

0.75

0.50

0.33

0.10

0.05

0.02

0.01

0.20

0

Table 7.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Per transistor

ICBO

collector-base cut-off

current

VCB =30V; IE = 0 A

--15

nA

VCB =30V; IE =0A;

Tj = 150 °C

--5

µA

IEBO

emitter-base cut-off

current

VEB =5V; IC = 0 A

-

100

nA

hFE

DC current gain

VCE =5V; IC = 2 mA

200

-

450

VCEsat

collector-emitter

saturation voltage

IC = 10 mA; IB = 0.5 mA

-

100

mV

IC = 100 mA; IB =5mA

[1] -

-

300

mV

VBEsat

base-emitter

saturation voltage

IC = 10 mA; IB = 0.5 mA

-

755

-

mV

VBE

base-emitter voltage

IC = 2 mA; VCE = 5 V

580

655

700

mV

Cc

collector capacitance IE =ie = 0 A; VCB =10V;

f=1MHz

-

1.5

pF

Ce

emitter capacitance

IC =ic = 0 A; VEB = 0.5 V;

f=1MHz

-11

-

pF

fT

transition frequency

IC = 10 mA; VCE =5V;

f = 100 MHz

100

-

MHz

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