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74HC00N Datasheet(PDF) 5 Page - NXP Semiconductors

Part No. 74HC00N
Description  Quad 2-input NAND gate
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Maker  NXP [NXP Semiconductors]
Homepage  http://www.nxp.com
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74HC00N Datasheet(HTML) 5 Page - NXP Semiconductors

 
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74HC_HCT00
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 6 — 14 December 2011
5 of 16
NXP Semiconductors
74HC00; 74HCT00
Quad 2-input NAND gate
10. Dynamic characteristics
CI
input
capacitance
-3.5
--
-
-
-
pF
74HCT00
VIH
HIGH-level
input voltage
VCC = 4.5 V to 5.5 V
-
1.6
-
2.0
-
2.0
-
V
VIL
LOW-level
input voltage
VCC = 4.5 V to 5.5 V
-
1.2
-
-
0.8
-
0.8
V
VOH
HIGH-level
output voltage
VI = VIH or VIL; VCC = 4.5 V
IO = 20 A
-
4.5
-
4.4
-
4.4
-
V
IO = 4.0 mA
-
4.32
-
3.84
-
3.7
-
V
VOL
LOW-level
output voltage
VI = VIH or VIL; VCC = 4.5 V
IO = 20 A; VCC = 4.5 V
-0
--
0.1
-
0.1
V
IO = 5.2 mA; VCC = 6.0 V
-
0.15
-
-
0.33
-
0.4
V
II
input leakage
current
VI = VCC or GND;
VCC =6.0 V
----
1-
1
A
ICC
supply current
VI = VCC or GND; IO =0A;
VCC =6.0 V
----
20
-
40
A
I
CC
additional
supply current
per input pin;
VI =VCC  2.1 V; IO =0A;
other inputs at VCC or GND;
VCC = 4.5 V to 5.5 V
-
150
-
-
675
-
735
A
CI
input
capacitance
-3.5
--
-
-
-
pF
Table 6.
Static characteristics …continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
Conditions
25
C
40 C to +85 C 40 C to +125 C Unit
Min
Typ
Max
Min
Max
Min
Max
Table 7.
Dynamic characteristics
GND = 0 V; CL = 50 pF; for load circuit see Figure 7.
Symbol Parameter
Conditions
25
C
40 C to +125 C Unit
Min
Typ
Max
Max
(85
C)
Max
(125
C)
74HC00
tpd
propagation delay
nA, nB to nY; see Figure 6
[1]
VCC = 2.0 V
-
25
-
115
135
ns
VCC = 4.5 V
-
9
-
23
27
ns
VCC = 5.0 V; CL =15pF
-
7
-
-
-
ns
VCC = 6.0 V
-
7
-
20
23
ns
tt
transition time
see Figure 6
[2]
VCC = 2.0 V
-
19
-
95
110
ns
VCC = 4.5 V
-
7
-
19
22
ns
VCC = 6.0 V
-
6
-
16
19
ns


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