PBSS5630PA datasheet(9/15 Pages) NXP

Part #	PBSS5630PA

Description	30 V, 6 A PNP low VCEsat (BISS) transistor

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Manufacturer	NXP [NXP Semiconductors]

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PBSS5630PA_1

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Product data sheet

Rev. 01 — 19 March 2010

9 of 15

NXP Semiconductors

PBSS5630PA

30 V, 6 A PNP low VCEsat (BISS) transistor

8.

Test information

Fig 14. BISS transistor switching time definition

VCC = 9V; IC = 2A; IBon = 0.1 A; IBoff =0.1 A

Fig 15. Test circuit for switching times

006aaa266

−IBon (100 %)

−IB

input pulse

(idealized waveform)

−IBoff

90 %

10 %

−IC (100 %)

−IC

td

ton

90 %

10 %

tr

output pulse

(idealized waveform)

tf

t

ts

toff

RC

R2

R1

DUT

mgd624

Vo

RB

(probe)

450

Ω

(probe)

450

Ω

oscilloscope

VBB

VI

VCC

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