41013 TKIM/60612 TKIM/72011PA TKIM TC-00002610 No.8987-1/9

http://onsemi.com

Semiconductor Components Industries, LLC, 2013

April, 2013

SFT1345

Power MOSFET

Features

•

ON-resistance RDS(on)1=210mΩ(typ.)

•

Input Capacitance Ciss=1020pF(typ.)

•

4V drive

•

Halogen free compliance

•

Protection diode in

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

--100

V

Gate-to-Source Voltage

VGSS

±20

V

Drain Current (DC)

ID

--11

A

Drain Current (PW≤10μs)

IDP

PW≤10μs, duty cycle≤1%

--44

A

Allowable Power Dissipation

PD

1.0

W

Tc=25°C35

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

7518-004

7003-004

Ordering number : EN8987B

T1345

LOT No.

TL

1

3

2,4

Ordering & Package Information

Marking

Electrical Connection

Device

Package

Shipping

memo

SFT1345-H

TP

(SC-64, TO-251)

500pcs./bag

Pb Free

and

Halogen Free

SFT1345-TL-H

TP-FA

(SC-63, TO-252)

700pcs./reel

Packing Type (TP-FA) : TL

6.5

5.0

2.3

0.5

12

4

3

0.85

0.7

1.2

0.6

0.5

2.3

2.3

1 : Gate

2 : Drain

3 : Source

4 : Drain

TP

6.5

5.0

2.3

0.5

12

4

3

0.85

0.6

0.5

1.2

2.3

2.3

0 to 0.2

1 : Gate

2 : Drain

3 : Source

4 : Drain

TP-FA

SFT1345-H

SFT1345-TL-H

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.