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STP190N55LF3 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP190N55LF3 Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 12 page November 2008 Rev 1 1/12 12 STP190N55LF3 N-channel 55 V, 2.9 m Ω, 120 A, TO-220 STripFET™ Power MOSFET Features ■ Logic level drive ■ 100% avalanche tested Application ■ Switching applications – Automotive Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique “single feature size” strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. Figure 1. Internal schematic diagram Type VDSS RDS(on) max ID PD STP190N55LF3 55 V < 3.7 m Ω 120 A 312 W TO-220 1 2 3 Table 1. Device summary Order code Marking Package Packaging STP190N55LF3 190N55LF3 TO-220 Tube www.st.com |
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