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STM32F103ZET7 Datasheet(PDF) 44 Page - STMicroelectronics |
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STM32F103ZET7 Datasheet(HTML) 44 Page - STMicroelectronics |
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44 / 130 page  Electrical characteristics STM32F103xC, STM32F103xD, STM32F103xE 44/130 Doc ID 14611 Rev 8 5.3.4 Embedded reference voltage The parameters given in Table 13 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 10. 5.3.5 Supply current characteristics The current consumption is a function of several parameters and factors such as the operating voltage, ambient temperature, I/O pin loading, device software configuration, operating frequencies, I/O pin switching rate, program location in memory and executed binary code. The current consumption is measured as described in Figure 13: Current consumption measurement scheme. All Run-mode current consumption measurements given in this section are performed with a reduced code that gives a consumption equivalent to Dhrystone 2.1 code. Maximum current consumption The MCU is placed under the following conditions: ● All I/O pins are in input mode with a static value at VDD or VSS (no load) ● All peripherals are disabled except when explicitly mentioned ● The Flash memory access time is adjusted to the fHCLK frequency (0 wait state from 0 to 24 MHz, 1 wait state from 24 to 48 MHz and 2 wait states above) ● Prefetch in ON (reminder: this bit must be set before clock setting and bus prescaling) ● When the peripherals are enabled fPCLK1 = fHCLK/2, fPCLK2 = fHCLK The parameters given in Table 14, Table 15 and Table 16 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 10. Table 13. Embedded internal reference voltage Symbol Parameter Conditions Min Typ Max Unit VREFINT Internal reference voltage –40 °C < TA < +105 °C 1.16 1.20 1.26 V –40 °C < TA < +85 °C 1.16 1.20 1.24 V TS_vrefint (1) 1. Shortest sampling time can be determined in the application by multiple iterations. ADC sampling time when reading the internal reference voltage 5.1 17.1(2) 2. Guaranteed by design, not tested in production. µs VRERINT (2) Internal reference voltage spread over the temperature range VDD = 3 V ±10 mV 10 mV TCoeff (2) Temperature coefficient 100 ppm/°C |
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