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NCV8405STT3G Datasheet(PDF) 3 Page - ON Semiconductor |
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NCV8405STT3G Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 12 page NCV8405, NCV8405A http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Test Condition Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) VGS = 0 V, ID = 10 mA, TJ = 25°C V(BR)DSS 42 46 51 V VGS = 0 V, ID = 10 mA, TJ = 150°C (Note 5) 42 45 51 Zero Gate Voltage Drain Current VGS = 0 V, VDS = 32 V, TJ = 25°C IDSS 0.5 2.0 mA VGS = 0 V, VDS = 32 V, TJ = 150°C (Note 5) 2.0 10 Gate Input Current VDS = 0 V, VGS = 5.0 V IGSSF 50 100 mA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS = VDS, ID = 150 mA VGS(th) 1.0 1.6 2.0 V Gate Threshold Temperature Coefficient VGS(th)/TJ 4.0 −mV/°C Static Drain−to−Source On−Resistance VGS = 10 V, ID = 1.4 A, TJ = 25°C RDS(on) 90 100 mW VGS = 10 V, ID = 1.4 A, TJ = 150°C (Note 5) 165 190 VGS = 5.0 V, ID = 1.4 A, TJ = 25°C 105 120 VGS = 5.0 V, ID = 1.4 A, TJ = 150°C (Note 5) 185 210 VGS = 5.0 V, ID = 0.5 A, TJ = 25°C 105 120 VGS = 5.0 V, ID = 0.5 A, TJ = 150°C (Note 5) 185 210 Source−Drain Forward On Voltage VGS = 0 V, IS = 7.0 A VSD 1.05 V SWITCHING CHARACTERISTICS (Note 5) Turn−ON Time (10% VIN to 90% ID) VGS = 10 V, VDD = 12 V ID = 2.5 A, RL = 4.7 W tON 20 ms Turn−OFF Time (90% VIN to 10% ID) tOFF 110 Slew−Rate ON (70% VDS to 50% VDS) VGS = 10 V, VDD = 12 V, RL = 4.7 W −dVDS/dtON 1.0 V/ms Slew−Rate OFF (50% VDS to 70% VDS) dVDS/dtOFF 0.4 SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 4) Current Limit VDS = 10 V, VGS = 5.0 V, TJ = 25°C ILIM 6.0 9.0 11 A VDS = 10 V, VGS = 5.0 V, TJ = 150°C (Note 5) 3.0 5.0 8.0 VDS = 10 V, VGS = 10 V, TJ = 25°C 7.0 10.5 13 VDS = 10 V, VGS = 10 V, TJ = 150°C (Note 5) 4.0 7.5 10 Temperature Limit (Turn−off) VGS = 5.0 V (Note 5) TLIM(off) 150 180 200 °C Thermal Hysteresis VGS = 5.0 V DTLIM(on) 15 Temperature Limit (Turn−off) VGS = 10 V (Note 5) TLIM(off) 150 165 185 Thermal Hysteresis VGS = 10 V DTLIM(on) 15 GATE INPUT CHARACTERISTICS (Note 5) Device ON Gate Input Current VGS = 5 V ID = 1.0 A IGON 50 mA VGS = 10 V ID = 1.0 A 400 Current Limit Gate Input Current VGS = 5 V, VDS = 10 V IGCL 0.05 mA VGS = 10 V, VDS = 10 V 0.4 Thermal Limit Fault Gate Input Current VGS = 5 V, VDS = 10 V IGTL 0.22 mA VGS = 10 V, VDS = 10 V 1.0 ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5) Electro−Static Discharge Capability Human Body Model (HBM) ESD 4000 V Machine Model (MM) 400 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Fault conditions are viewed as beyond the normal operating range of the part. 5. Not subject to production testing. |
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