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MTY100N10E Datasheet(PDF) 2 Page - Motorola, Inc

Part No. MTY100N10E
Description  TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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MTY100N10E Datasheet(HTML) 2 Page - Motorola, Inc

   
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MTY100N10E
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Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 250 µA)
Temperature Coefficient (Positive)
V(BR)DSS
100
115
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 100 Vdc, VGS = 0 Vdc)
(VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
200
µAdc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
7
4
Vdc
mV/
°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 50 Adc)
RDS(on)
0.011
Ohm
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 100 Adc)
(ID = 50 Adc, TJ = 125°C)
VDS(on)
1.0
1.2
1.0
Vdc
Forward Transconductance (VDS = 6 Vdc, ID = 50 Adc)
gFS
30
49
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1 MHz)
Ciss
7600
10640
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1 MHz)
Coss
3300
4620
Reverse Transfer Capacitance
f = 1 MHz)
Crss
1200
2400
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(VDD = 50 Vdc, ID = 100 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
td(on)
48
96
ns
Rise Time
(VDD = 50 Vdc, ID = 100 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
tr
490
980
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 Ω)
td(off)
186
372
Fall Time
G = 9.1 Ω)
tf
384
768
Gate Charge
(See Figure 8)
(VDS = 80 Vdc, ID = 100 Adc,
VGS = 10 Vdc)
QT
270
378
nC
(See Figure 8)
(VDS = 80 Vdc, ID = 100 Adc,
VGS = 10 Vdc)
Q1
50
(VDS = 80 Vdc, ID = 100 Adc,
VGS = 10 Vdc)
Q2
150
Q3
118
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 100 Adc, VGS = 0 Vdc)
(IS = 100 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
1
0.9
1.2
Vdc
Reverse Recovery Time
(See Figure 14)
(IS = 100 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
trr
145
ns
(See Figure 14)
(IS = 100 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
ta
90
(IS = 100 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
tb
55
Reverse Recovery Stored Charge
QRR
2.34
µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
13
nH
(1) Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.


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