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MTW35N15E Datasheet(PDF) 2 Page - Motorola, Inc

Part No. MTW35N15E
Description  TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MTW35N15E Datasheet(HTML) 2 Page - Motorola, Inc

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MTW35N15E
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
150
210
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 150 Vdc, VGS = 0 Vdc)
(VDS = 150 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
100
µAdc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Temperature Coefficient (Negative)
VGS(th)
2.0
7.0
4.0
Vdc
mV/
°C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 17.5 Adc)
RDS(on)
0.05
Ohm
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 35 Adc)
(ID = 17.5 Adc, TJ = 125°C)
VDS(on)
1.45
1.8
1.7
Vdc
Forward Transconductance (VDS = 10 Vdc, ID = 17.5 Adc)
gFS
11
18
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vdc V
0 Vdc
Ciss
3600
5040
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
855
1170
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
165
330
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(V
75 Vd
I
35 Ad
td(on)
28
56
ns
Rise Time
(VDD = 75 Vdc, ID = 35 Adc,
VGS =10Vdc
tr
170
346
Turn–Off Delay Time
VGS = 10 Vdc,
RG = 9.1 Ω)
td(off)
90
180
Fall Time
G
)
tf
103
210
Gate Charge
(See Figure 8)
(V
120 Vd
I
35 Ad
QT
98
137
nC
(See Figure 8)
(VDS = 120 Vdc, ID = 35 Adc,
Q1
19
( DS
, D
,
VGS = 10 Vdc)
Q2
49
Q3
40
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 35 Adc, VGS = 0 Vdc)
(IS = 35 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
0.95
0.9
1.5
Vdc
Reverse Recovery Time
(See Figure 14)
(I
35 Ad
V
0 Vd
trr
200
ns
(See Figure 14)
(IS = 35 Adc, VGS = 0 Vdc,
ta
167
( S
,
GS
,
dIS/dt = 100 A/µs)
tb
32
Reverse Recovery Stored Charge
QRR
1.63
µC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
13
nH
(1) Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.


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