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C527XT290-0107-A Datasheet(PDF) 1 Page - Cree, Inc |
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C527XT290-0107-A Datasheet(HTML) 1 Page - Cree, Inc |
1 / 6 page Subject to change without notice. www.cree.com FEATURES XThin LED Performance 460 & 470 nm XT-12™ – 12.0 mW min. XT-16™ – 16.0 mW min. XT-18™ – 18.0 mW min. XT-21™ – 21.0 mW min. XT-24™ – 24.0 mW min. 505nm – 8.5 mW min. 527nm – 7.0 mW min. Thin 115 µm Chip Low Forward Voltage - 3.2 Typical at 20 mA Single Wire Bond Structure Class 2 ESD Rating • – – – – – • • • • APPLICATIONS Cellular Phone LCD Backlighting Digital Camera Flash for Mobile Appliance Mobile Phone Key Pads White LEDs Blue LEDs Green LEDs Automotive Dashboard Lighting LED Video Displays Audio Product Display Lighting Traffic Signals • • • – – – • • • • XThin® LEDs CxxxXT290-Sxx00-A Cree’s XThin LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency and require only a single wire bond connection. These vertically structured LED chips are approximately 115 microns in height and require a low forward voltage. Cree’s XT™ chips are tested for conformity to optical and electrical specifications and the ability to withstand 1000V ESD. Applications for XThin LEDs include next-generation mobile appliances for use in their LCD backlights and digital camera flash where brightness, sub-miniaturization, and low power consumption are required. CxxxXT290-Sxx00-A Chip Diagram Top View Bottom View Die Cross Section G•SiC LED Chip 300 x 300 μm Gold Bond Pad 105 μm Diameter SiC Substrate t = 115µm Backside Metalization Cathode (-) Anode (+) |
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