1

MOTOROLA

1

MTW33N10E

1

1

MTW33N10E

MOTOROLA

Designer's™ Data Sheet

Power Field Effect Transistor

TO247 with Isolated Mounting Hole

N-Channel Enhancement-Mode Silicon Gate

This advanced TMOS E-FET is designed to withstand high

energy in the avalanche and commutation modes. The new energy

efficient design also offers a drain-to-source diode with a fast

recovery time. Designed for low voltage, high speed switching

applications in power supplies, converters and PWM motor

controls, these devices are particularly well suited for bridge circuits

where diode speed and commutating safe operating areas are

critical and offer additional safety margin against unexpected

voltage transients.

• Avalanche Energy Specified

• Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• IDSS and VDS(on) Specified at Elevated Temperature

• Isolated Mounting Hole Reduces Mounting Hardware

Rating

Symbol

Value

Unit

Drain-Source Voltage

VDSS

100

Vdc

Drain-Gate Voltage (RGS = 1.0 MΩ)

VDGR

100

Vdc

Gate-Source Voltage — Continuous

VGS

VGSM

± 20

± 40

Vdc

Vpk

Drain Current — Continuous @ 25

°C

— Continuous @ 100

°C

— Single Pulse (tp ≤ 10 µs)

ID

ID

IDM

33

20

99

Adc

Apk

Total Power Dissipation @ TC = 25°C

Derate above 25

°C

PD

125

1.0

Watts

W/

°C

Operating and Storage Temperature Range

TJ, Tstg

– 55 to 150

°C

Single Pulse Drain-to-Source Avalanche Energy — Starting TJ = 25°C

(VDD = 25 Vdc, VGS = 10 Vdc, IL = 33 Apk, L = 1.000 mH, RG = 25 Ω)

EAS

545

mJ

Thermal Resistance — Junction to Case

— Junction to Ambient

R

θJC

R

θJA

1.0

40

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8

″ from case for 5 seconds

TL

260

°C

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E-FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by MTW33N10E/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

© Motorola, Inc. 1994

3/94

MTW33N10E

TMOS POWER FET

33 AMPERES

100 VOLTS

RDS(on) = 0.06 OHM

CASE 340F, Style 1

TO-247AE

®

Motorola Preferred Device

D

S

G

N-Channel