 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
BZT03C24 Datasheet(PDF) 1 Page - Vishay Siliconix |
|
||||||||||||||||||||||||||||||
BZT03C24 Datasheet(HTML) 1 Page - Vishay Siliconix |
|
|
1 / 5 page 
VISHAY BZT03..Series Document Number 85599 Rev. 4, 10-Sep-03 Vishay Semiconductors www.vishay.com 1 949539 Silicon Zener-Diodes with Surge Current Specification Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications Medium power voltage regulators and medium power transient suppression circuits Mechanical Data Case:SOD57 Weight: 370 mg (max.500 mg) Packaging Codes/Options: TAP / 5 K Ammopack (52 mm tape) / 25 K/box TR / 5 K 10" reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Thermal Characteristics Tamb = 25 °C, unless otherwise specified Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit Power dissipation l = 10 mm, TL = 25 °C PV 3.25 W Tamb = 25 °C PV 1.3 W Repetitive peak reverse power dissipation PZRM 10 W Non repetitive peak surge power dissipation tp = 100 µs, Tj = 25 °C PZSM 600 W Junction temperature Tj 175 °C Storage temperature range Tstg - 65 to + 175 °C Parameter Test condition Symbol Value Unit Junction ambient l = 10 mm, TL = constant RthJA 46 K/W on PC board with spacing 25 mm RthJA 100 K/W Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 0.5 A VF 1.2 V |
|
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
