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74LVCH8T245PW Datasheet(PDF) 10 Page - NXP Semiconductors |
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74LVCH8T245PW Datasheet(HTML) 10 Page - NXP Semiconductors |
10 / 28 page 74LVC_LVCH8T245 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 — 12 December 2011 10 of 28 NXP Semiconductors 74LVC8T245; 74LVCH8T245 8-bit dual supply translating transceiver; 3-state 10. Dynamic characteristics [1] tpd is the same as tPLH and tPHL; tdis is the same as tPLZ and tPHZ; ten is the same as tPZL and tPZH. [1] tpd is the same as tPLH and tPHL; tdis is the same as tPLZ and tPHZ; ten is the same as tPZL and tPZH. [1] CPD is used to determine the dynamic power dissipation (PD in W). PD =CPD VCC2 fi N+ (CL VCC2 fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; (C L VCC 2 f o) = sum of the outputs. [2] fi = 10 MHz; VI =GND to VCC; tr = tf = 1 ns; CL = 0 pF; RL = . Table 8. Typical dynamic characteristics at VCC(A) = 1.2 V and Tamb = 25 C[1] Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7; for waveforms see Figure 5 and Figure 6. Symbol Parameter Conditions VCC(B) Unit 1.2 V 1.5 V 1.8 V 2.5 V 3.3 V 5.0 V tpd propagation delay An to Bn 11.0 8.5 7.4 6.2 5.7 5.4 ns Bn to An 11.0 10.0 9.5 9.1 8.9 8.9 ns tdis disable time OE to An 9.5 9.5 9.5 9.5 9.5 9.5 ns OE to Bn 10.2 8.2 7.8 6.7 7.3 6.4 ns ten enable time OE to An 13.5 13.5 13.5 13.5 13.5 13.5 ns OE to Bn 13.6 10.3 8.9 7.5 7.1 7.0 ns Table 9. Typical dynamic characteristics at VCC(B) = 1.2 V and Tamb = 25 C[1] Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 7; for waveforms see Figure 5 and Figure 6. Symbol Parameter Conditions VCC(A) Unit 1.2 V 1.5 V 1.8 V 2.5 V 3.3 V 5.0 V tpd propagation delay An to Bn 11.0 10.0 9.5 9.1 8.9 8.8 ns Bn to An 11.0 8.5 7.3 6.2 5.7 5.4 ns tdis disable time OE to An 9.5 6.8 5.4 3.8 4.1 3.1 ns OE to Bn 10.2 9.1 8.6 8.1 7.8 7.8 ns ten enable time OE to An 13.5 9.0 6.9 4.8 3.8 3.2 ns OE to Bn 13.6 12.5 12.0 11.5 11.4 11.4 ns Table 10. Typical power dissipation capacitance at VCC(A) = VCC(B) and Tamb = 25 C[1][2] Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions VCC(A) and VCC(B) Unit 1.8 V 2.5 V 3.3 V 5.0 V CPD power dissipation capacitance A port: (direction A to B); B port: (direction B to A) 11 12 pF A port: (direction B to A); B port: (direction A to B) 13 13 13 13 pF |
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