TISP9110MDM datasheet(2/5 Pages) BOURNS

Part #	TISP9110MDM

Description	INTEGRATED COMPLEMENTARY BUFFERED-GATE SCRS FOR DUAL POLARITY SLIC OVERVOLTAGE PROTECTION

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Manufacturer	BOURNS [Bourns Electronic Solutions]

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APRIL 2013 - REVISED NOVEMBER 2013

Speciﬁcations are subject to change without notice.

The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.

Users should verify actual device performance in their speciﬁc applications.

Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)

TISP9110MDM Overvoltage Protector

Electrical Characteristics for any Section, TA = 25 °C (Unless Otherwise Noted)

Parameter

Test Conditions

Min

Typ

Max

Unit

ID

Off-state current

VD = VDRM, VG1(Line) = 0, VG2 ≥ +5 V

VD = VDRM, VG2(Line) = 0, VG1 ≥ -5 V

TA = 25 °C

TA = 85 °C

TA = 25 °C

TA = 85 °C

-5

-50

+5

+50

μA

IG1(Line)

Negative-gate leakage current

VG1(Line) = -220 V

- 5

μA

IG2(Line)

Positive-gate leakage current

VG2(Line) = +220 V

+ 5

μA

VG1L(BO)

Gate - Line impuls e breakover voltage

VG1 = -100 V, IT = -100 A (see Note 6)

VG1 = -100 V, IT = -30 A

2/10 μs

10/1000 μs

-15

-11

V

VG2L(BO)

Gate - Line impuls e breakover voltage

VG2 = +100 V, IT = +100 A (see Note 6)

VG2 = +100 V, IT = +30 A

2/10 μs

10/1000 μs

+15

+11

V

IH-

Negative holding current

VG1 = -60 V, IT = -1 A, di/dt = 1 A/ms

-150

mA

IG1T

Negative-gate trigger current

IT =-5A,t p(g) ≥20μs, VG1 = -60 V

+ 5

mA

IG2T

Positive-gate trigger current

IT =5A,t p(g) ≥20μs, VG2 = 60 V

- 5

mA

CO

Line - Ground off-state capacitance

f = 1 MHz, VD = -3 V, G1 & G2 open circuit

33

pF

NOTE:

6. Voltage measurements should be made with an oscillosc ope with limited bandw idth (20 MHz) to avoid high frequency no ise.

Rating

Symbol

Value

Unit

Repetitive peak off-state voltage

VG1(Line) =0,V G2 ≥ +5 V

VG2(Line) =0,V G1 ≥-5 V

VDRM

-120

+120

V

Non-repetitive peak impulse current (see Notes 1, 2, 3 and 4)

IPPSM

±150

±80

±50

A

2/10 μs (Telcordia GR-1089-CORE)

5/310 μs (ITU-T K.20, K.21 & K.45, K.44 open-circuit voltage wave shape 10/700 ms)

10/1000 μs (T elcordia GR-1089-CORE)

Non-repetitive peak on-state current, 50 Hz / 60 Hz (see Notes 1, 2, 3 and 5)

ITSM

9.0

5.0

1.7

A

0.2 s

1 s

900 s

Maximum negative battery supply voltage

VG1M

-110

V

Maximum positive battery supply voltage

VG2M

+110

V

Maximum differential battery supply voltage

V(BAT)M

220

V

Junction temperature

TJ

-40 to +150

°C

Storage temperature range

Tstg

-65 to +150

°C

NOTES: 1. Initially the device must be in thermal equilibrium with TJ = 25 °C. The surge may be repeated after the device returns to its initial

conditions.

2. The rated current values may be applied to either of the Line to Ground terminal pairs. Additionally, both terminal pairs may have

their rated current values applied simultaneously (in this case the Ground terminal current will be twice the rated current value of a

single terminal pair).

3. Rated currents only apply if pins 6 & 7 (Ground) are connected together.

4. Applies for the following bias conditions: VG1 = -20 V to -110 V, VG2 = 0 V to +110 V.

5. EIA/JESD51-2 environment and EIA/JESD51-7 high effective thermal conductivity test board (multi-layer) connected with 0.6 mm

printed wiring track widths.

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