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TISP9110MDM Datasheet(PDF) 2 Page - Bourns Electronic Solutions |
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TISP9110MDM Datasheet(HTML) 2 Page - Bourns Electronic Solutions |
2 / 5 page APRIL 2013 - REVISED NOVEMBER 2013 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted) TISP9110MDM Overvoltage Protector Electrical Characteristics for any Section, TA = 25 °C (Unless Otherwise Noted) Parameter Test Conditions Min Typ Max Unit ID Off-state current VD = VDRM, VG1(Line) = 0, VG2 ≥ +5 V VD = VDRM, VG2(Line) = 0, VG1 ≥ -5 V TA = 25 °C TA = 85 °C TA = 25 °C TA = 85 °C -5 -50 +5 +50 μA IG1(Line) Negative-gate leakage current VG1(Line) = -220 V - 5 μA IG2(Line) Positive-gate leakage current VG2(Line) = +220 V + 5 μA VG1L(BO) Gate - Line impuls e breakover voltage VG1 = -100 V, IT = -100 A (see Note 6) VG1 = -100 V, IT = -30 A 2/10 μs 10/1000 μs -15 -11 V VG2L(BO) Gate - Line impuls e breakover voltage VG2 = +100 V, IT = +100 A (see Note 6) VG2 = +100 V, IT = +30 A 2/10 μs 10/1000 μs +15 +11 V IH- Negative holding current VG1 = -60 V, IT = -1 A, di/dt = 1 A/ms -150 mA IG1T Negative-gate trigger current IT =-5A,t p(g) ≥20μs, VG1 = -60 V + 5 mA IG2T Positive-gate trigger current IT =5A,t p(g) ≥20μs, VG2 = 60 V - 5 mA CO Line - Ground off-state capacitance f = 1 MHz, VD = -3 V, G1 & G2 open circuit 33 pF NOTE: 6. Voltage measurements should be made with an oscillosc ope with limited bandw idth (20 MHz) to avoid high frequency no ise. Rating Symbol Value Unit Repetitive peak off-state voltage VG1(Line) =0,V G2 ≥ +5 V VG2(Line) =0,V G1 ≥-5 V VDRM -120 +120 V Non-repetitive peak impulse current (see Notes 1, 2, 3 and 4) IPPSM ±150 ±80 ±50 A 2/10 μs (Telcordia GR-1089-CORE) 5/310 μs (ITU-T K.20, K.21 & K.45, K.44 open-circuit voltage wave shape 10/700 ms) 10/1000 μs (T elcordia GR-1089-CORE) Non-repetitive peak on-state current, 50 Hz / 60 Hz (see Notes 1, 2, 3 and 5) ITSM 9.0 5.0 1.7 A 0.2 s 1 s 900 s Maximum negative battery supply voltage VG1M -110 V Maximum positive battery supply voltage VG2M +110 V Maximum differential battery supply voltage V(BAT)M 220 V Junction temperature TJ -40 to +150 °C Storage temperature range Tstg -65 to +150 °C NOTES: 1. Initially the device must be in thermal equilibrium with TJ = 25 °C. The surge may be repeated after the device returns to its initial conditions. 2. The rated current values may be applied to either of the Line to Ground terminal pairs. Additionally, both terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the rated current value of a single terminal pair). 3. Rated currents only apply if pins 6 & 7 (Ground) are connected together. 4. Applies for the following bias conditions: VG1 = -20 V to -110 V, VG2 = 0 V to +110 V. 5. EIA/JESD51-2 environment and EIA/JESD51-7 high effective thermal conductivity test board (multi-layer) connected with 0.6 mm printed wiring track widths. |
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