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AM29F080B Datasheet(PDF) 2 Page - Advanced Micro Devices

Part No. AM29F080B
Description  8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
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Maker  AMD [Advanced Micro Devices]
Homepage  http://www.amd.com
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AM29F080B Datasheet(HTML) 2 Page - Advanced Micro Devices

 
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Am29F080B
P R E L I M I NARY
GENERAL DESCRIPTION
The Am29F080B is an 8 Mbit, 5.0 volt-only Flash mem-
ory organized as 1,048,576 bytes. The 8 bits of data
appear on DQ0–DQ7. The Am29F080B is offered in
40-pin TSOP and 44-pin SO packages. This device is
designed to be programmed in-system with the stan-
dard system 5.0 volt VCC supply. A 12.0 volt VPP is not
required for program or erase operations. The device
can also be programmed in standard EPROM pro-
grammers.
This device is manufactured using AMD’s 0.35 µm
process technology, and offers all the features and ben-
efits of the Am29F080, which was manufactured using
0.5 µm process technology.
The standard device offers access times of 70, 90, 120,
and 150 ns, allowing high-speed microprocessors to op-
erate without wait states. To eliminate bus contention,
the device has separate chip enable (CE#), write enable
(WE#), and output enable (OE#) controls.
The device requires only a single 5.0 volt power sup-
ply for both read and write functions. Internally gener-
ated and regulated voltages are provided for the
program and erase operations.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Com-
mands are written to the command register using stan-
dard microprocessor write timings. Register contents
serve as input to an internal state-machine that con-
trols the erase and programming circuitry. Write cycles
also internally latch addresses and data needed for the
programming and erase operations. Reading data out
of the device is similar to reading from other Flash or
EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies
proper cell margin.
Device erasure occurs by executing the erase com-
mand sequence. This initiates the Embedded Erase
algorithm—an internal algorithm that automatically
preprograms the array (if it is not already programmed)
before executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle) status bits. After a program or erase cycle has
been completed, the device is ready to read array data
or accept another command.
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low
VCC detector that automatically inhibits write opera-
tions during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of mem-
ory. This can be achieved via programming equipment.
The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The hardware RESET# pin terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
The system can place the device into the standby
mode. Power consumption is greatly reduced in
this mode.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
hi ghe s t leve ls of qu ali t y, r e l i ab ili ty and c o s t
effectiveness. The device electrically erases all
bits wi t h in a s e c t or s i mult a neous ly v i a
F o w l e r -N ordheim t unneling. The dat a is
programmed using hot electron injection.


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