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AM28F020-90FC Datasheet(PDF) 2 Page - Advanced Micro Devices

Part # AM28F020-90FC
Description  2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
Download  35 Pages
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Manufacturer  AMD [Advanced Micro Devices]
Direct Link  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM28F020-90FC Datasheet(HTML) 2 Page - Advanced Micro Devices

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2
Am28F020
addresses and data needed for the programming and
erase operations. For system design simplification, the
Am28F020 is designed to support either WE# or CE#
co ntrolled w rites. Durin g a sys tem write cy cle,
addresses are latched on the falling edge of WE# or
CE#, whichever occurs last. Data is latched on the rising
edge of WE# or CE#, whichever occurs first. To simplify
discussion, the WE# pin is used as the write cycle
control pin throughout the rest of this data sheet. All
setup and hold times are with respect to the WE# signal.
AMD’s Flash technology combines years of EPROM
and EEPROM experience to produce the highest levels
of quality, reliability, and cost effectiveness. The
Am28F020 electrically erases all bits simultaneously
using Fowler-Nordheim tunneling. The bytes are pro-
gra mme d one byte at a time using the EPRO M
programming mechanism of hot electron injection.
PRODUCT SELECTOR GUIDE
BLOCK DIAGRAM
Family Part Number
Am28F020
Speed Options (VCC = 5.0 V ± 10%)
-70
-90
-120
-150
-200
Max Access Time (ns)
70
90
120
150
200
CE
# (E#) Access (ns)
70
90
120
150
200
OE
# (G#) Access (ns)
35
35
50
55
55
14727F-1
Erase
Voltage
Switch
Input/Output
Buffers
Data Latch
Y-Gating
2,097,152
Bit
Cell Matrix
X-Decoder
Y-Decoder
Chip Enable
Output Enable
Logic
Program/Erase
Pulse Timer
Low VCC
Detector
Command
Register
WE#
CE#
OE#
A0–A17
DQ0–DQ7
VCC
VSS
State
Control
VPP
To Array
Program
Voltage
Switch


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