AM29F016B datasheet(20/38 Pages) AMD

Part #	AM29F016B

Description	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory

Download	38 Pages

Scroll/Zoom	100%

Manufacturer	AMD [Advanced Micro Devices]

Direct Link	http://www.amd.com

Logo

20 / 38 page

20

Am29F016B

P R E L I M I NARY

the system must write the reset command to return to

reading array data.

The remaining scenario is that the system initially de-

termines that the toggle bit is toggling and DQ5 has not

gone high. The system may continue to monitor the

toggle bit and DQ5 through successive read cycles, de-

termining the status as described in the previous para-

graph. Alternatively, it may choose to perform other

system tasks. In this case, the system must start at the

beginning of the algorithm when it returns to determine

the status of the operation (top of Figure 5).

DQ5: Exceeded Timing Limits

DQ5 indicates whether the program or erase time has

exceeded a specified internal pulse count limit. Under

these conditions DQ5 produces a “1.” This is a failure

condition that indicates the program or erase cycle was

not successfully completed.

The DQ5 failure condition may appear if the system

tries to program a “1” to a location that is previously pro-

grammed to “0.” Only an erase operation can change

a “0” back to a “1.” Under this condition, the device

halts the operation, and when the operation has ex-

ceeded the timing limits, DQ5 produces a “1.”

Under both these conditions, the system must issue the

reset command to return the device to reading array

data.

DQ3: Sector Erase Timer

After writing a sector erase command sequence, the

system may read DQ3 to determine whether or not an

erase operation has begun. (The sector erase timer

does not apply to the chip erase command.) If addi-

tional sectors are selected for erasure, the entire time-

out also applies after each additional sector erase

command. When the time-out is complete, DQ3

switches from “0” to “1.” The system may ignore DQ3

if the system can guarantee that the time between ad-

ditional sector erase commands will always be less

than 50 µs. See also the “Sector Erase Command Se-

quence” section.

After the sector erase command sequence is written,

the system should read the status on DQ7 (Data# Poll-

ing) or DQ6 (Toggle Bit I) to ensure the device has ac-

cepted the command sequence, and then read DQ3. If

DQ3 is “1”, the internally controlled erase cycle has be-

gun; all further commands (other than Erase Suspend)

are ignored until the erase operation is complete. If

DQ3 is “0”, the device will accept additional sector

erase commands. To ensure the command has been

accepted, the system software should check the status

of DQ3 prior to and following each subsequent sector

erase command. If DQ3 is high on the second status

check, the last command might not have been ac-

cepted. Table 6 shows the outputs for DQ3.

START

No

Yes

DQ5 = 1?

No

Yes

Toggle Bit

= Toggle?

No

Program/Erase

Operation Not

Complete, Write

Reset Command

Program/Erase

Operation Complete

Read DQ7–DQ0

Toggle Bit

= Toggle?

Read DQ7–DQ0

Twice

Read DQ7–DQ0

Notes:

1. Read toggle bit twice to determine whether or not it is

toggling. See text.

2. Recheck toggle bit because it may stop toggling as DQ5

changes to “1”. See text.

21444B-12

Figure 5.

Toggle Bit Algorithm

(Notes

1, 2)

(Note 1)

Similar Part No. - AM29F016B

Manufacturer	Part #	Datasheet	Description
Advanced Micro Devices	AM29F016B-1	190Kb / 8P	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1
	AM29F016B-120DGC1	190Kb / 8P	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1
	AM29F016B-120DGI1	190Kb / 8P	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1
	AM29F016B-120DPC1	190Kb / 8P	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1
	AM29F016B-120DPI1	190Kb / 8P	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory-Die Revision 1

More results

Similar Description - AM29F016B

Manufacturer	Part #	Datasheet	Description
Advanced Micro Devices	AM29F017B	443Kb / 35P	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
	AM29F017D	797Kb / 41P	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
	AM29F016D	1Mb / 45P	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
SPANSION	AM29F017D	1,021Kb / 44P	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
SPANSION	AM29F016D	1Mb / 44P	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Advanced Micro Devices	AM29F016D	1Mb / 43P	16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
	AM29F080B	451Kb / 37P	8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
	AM29F080B	770Kb / 39P	8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
	AM29LV017B	510Kb / 39P	16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory
	AM29LV017D	948Kb / 48P	16 Megabit (2 M x 8-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory

More results

AM29F016B Datasheet(PDF) 20 Page - Advanced Micro Devices

AM29F016B Datasheet(HTML) 20 Page - Advanced Micro Devices

Similar Part No. - AM29F016B

Similar Description - AM29F016B

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38

Datasheet Download

Link URL