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AM28F256 Datasheet(PDF) 6 Page - Advanced Micro Devices

Part No. AM28F256
Description  256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory
Download  35 Pages
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Maker  AMD [Advanced Micro Devices]
Homepage  http://www.amd.com
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AM28F256 Datasheet(HTML) 6 Page - Advanced Micro Devices

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6
Am28F256
PIN DESCRIPTION
A0–A14
Address Inputs for memory locations. Internal latches
hold addresses during write cycles.
CE# (E#)
Chip Enable active low input activates the chip’s control
logic and input buffers. Chip Enable high will deselect
the device and operates the chip in stand-by mode.
DQ0–DQ7
Data Inputs during memor y write cycles. Internal
latches hold data during write cycles. Data Outputs
during memory read cycles.
NC
No Connect-corresponding pin is not connected
internally to the die.
OE# (G#)
Output Enable active low input gates the outputs of the
device through the data buffers dur ing memor y
read cycles. Output Enable is high during command
sequencing and program/erase operations.
V
CC
Power supply for device operation. (5.0 V
± 5% or 10%)
V
PP
Program voltage input. VPP must be at high voltage in
order to write to the command register. The command
register controls all functions required to alter the
memory array contents. Memory contents cannot be
altered when VPP ≤ VCC +2 V.
V
SS
Ground
WE# (W#)
Write Enable active low input controls the write function
of the command register to the memory array. The
target address is latched on the falling edge of the
Write Enable pulse and the appropriate data is latched
on the rising edge of the pulse. Write Enable high
inhibits writing to the device.


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