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AM27C040-200DCB Datasheet(PDF) 6 Page - Advanced Micro Devices |
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AM27C040-200DCB Datasheet(HTML) 6 Page - Advanced Micro Devices |
6 / 13 page 6 Am27C040 FI NAL common connection to all devices in the array and con- nected to the READ line from the system control bus. This assures that all deselected memory devices are in their low-power standby mode and that the output pins are only active when data is desired from a particular memory device. System Applications During the switch between active and standby condi- tions, transient current peaks are produced on the ris- ing and falling edges of Chip Enable. The magnitude of these transient current peaks is dependent on the out- put capacitance loading of the device. At a minimum, a 0.1 µF ceramic capacitor (high frequency, low inherent inductance) should be used on each device between VCC and VSS to minimize transient effects. In addition, to overcome the voltage drop caused by the inductive effects of the printed circuit board traces on EPROM ar- rays, a 4.7 µF bulk electrolytic capacitor should be used between VCC and VSS for each eight devices. The loca- tion of the capacitor should be close to where the power supply is connected to the array. MODE SELECT TABLE Note: 1. VH = 12.0 V ± 0.5 V. 2. X = Either VIH or VIL 3. A1 – A8 = A10 – A18 = VIL 4. See DC Programming Characteristics in the EPROM Products Data Book for VPP voltage during programming Mode CE#/PGM# OE# A0 A9 VPP Outputs Read VIL VIL XX X DOUT Output Disable VIL VIH X X X HIGH Z Standby (TTL) VIH X X X X HIGH Z Standby (CMOS) VCC + 0.3 V X X X X HIGH Z Program VIL VIH XX VPP DIN Program Verify VIL VIL XX VPP DOUT Program Inhibit VIH XX X VPP HIGH Z Auto Select (Note 3) Manufacturer Code VIL VIL VIL VH X 01h Device Code VIL VIL VIH VH X 9Bh |
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