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TC53C1802CTTR Datasheet(PDF) 2 Page - Microchip Technology |
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TC53C1802CTTR Datasheet(HTML) 2 Page - Microchip Technology |
2 / 10 page TC53 DS21432C-page 2 2002 Microchip Technology Inc. 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings* Input Voltage ........................................................+12V Output Current ....................................................50mA Output Voltage ......................VIN + 0.3V to VSS – 0.3V Power Dissipation 5-Pin SOT-23A ...........................................240mW Operating Temperature Range.............-40°C to +85°C Storage Temperature Range ..............-40°C to +125°C *Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. TC53 ELECTRICAL SPECIFICATIONS Electrical Characteristics: TA = 25°C, unless otherwise specified. Note 1, Note 2. Symbol Parameter Min Typ Max Units Test Conditions VDF Detect Voltage VT x 0.98 VT ±0.5% VT x 1.02 V Note 3 VHYS Hysteresis Range VDF x 0.02 VDF x 0.05 VDF x 0.08 V ISS Supply Current — — — — — 0.9 1.0 1.3 1.6 2.0 2.6 3.0 3.4 3.8 4.2 µAVIN = 1.5V VIN = 2.0V VIN = 3.0V VIN = 4.0V VIN = 5.0V VIN Operating Voltage 1.5 — 10.0 V VDF = 2.1 to 6.0V IOUT Output Current — — — — — 2.2 7.7 10.1 11.5 13.0 — — — — — mA N-ch; VDS = 0.5V, VIN = 1.0V VIN = 2.0V VIN = 3.0V VIN = 4.0V VIN = 5.0V — -10.0 — P-ch; VDS = 2.1V, VIN = 8.0V (CMOS Output) ∆VDF/ ( ∆TOPR VDF) Temperature Characteristics — ±100 — ppm/°C tDLY Delay Time (VDR → VOUT Inversion) —— 0.2 msec Note 1: An additional resistor between the VIN pin and the supply voltage may alter the electrical characteristics due to the increasing values of VDR. 2: The power consumption during power-start to output being stable (release operation) is 2 µA greater than it is after that period (completion of release operation) because of rush current in the delay circuit. 3: VT is the factory-programmed voltage detection threshold. |
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