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C460TR2432-0305 Datasheet(PDF) 2 Page - Marktech Corporate |
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C460TR2432-0305 Datasheet(HTML) 2 Page - Marktech Corporate |
2 / 6 page Copyright © 2008-2011 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and TR and TR2432 are trademarks of Cree, Inc. 2 CPR3DQ Rev B Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 www.cree.com Maximum Ratings at T A = 25°C Notes 1&3 CxxxTR2432-Sxx00 DCForwardCurrent 30mA PeakForwardCurrent(1/10dutycycle@1kHz) 100mA LEDJunctionTemperature 125°C ReverseVoltage 5V OperatingTemperatureRange -40°Cto+100°C LEDChipStorageTemperatureRange -40°Cto+120°C DieSheetStorageConditions ≤30°C/≤85%RH ElectrostaticDischargeThreshold(HBM)Note2 1000V ElectrostaticDischargeClassification(MIL-STD-883E)Note2 Class2 Typical Electrical/Optical Characteristics at T A = 25°C, If = 20 mA Note 3 Part Number Forward Voltage (V f, V) Reverse Current [I(Vr=5V), μA] Full Width Half Max ( λ D, nm) Min. Typ. Max. Max. Typ. C450TR2432-Sxx00 2.7 3.1 3.4 2 20 C460TR2432-Sxx00 2.7 3.1 3.4 2 21 C470TR2432-Sxx00 2.7 3.1 3.4 2 21 C527TR2432-Sxx00 2.9 3.2 3.6 2 35 Mechanical Specifications CxxxTR2432-Sxx00 Description Dimension Tolerance P-NJunctionArea(μm) 200x280 ±35 ChipArea(μm) 240x320 ±35 ChipThickness(μm) 115 ±15 AuBondPadDiameterAnode(μm) 90 -5,+15 AuBondPadThicknesses(μm) 1.0 ±0.5 AuBondPadAreaCathode(μm) 90x90 -5,+15 BottomArea(μm) 140x220 ±35 Notes: 1. Maximumratingsarepackagedependent.TheaboveratingsweredeterminedusingaT-13/4package(withHysolOS4000epoxy encapsulationandclearepoxydieattach)forcharacterization.Ratingsforotherpackagesmaydiffer.Theforwardcurrents(DC andPeak)arenotlimitedbythediebutbytheeffectoftheLEDjunctiontemperatureonthepackage.Thejunctiontemperature limitof125°CisalimitoftheT-13/4package;junctiontemperatureshouldbecharacterizedinaspecificpackagetodetermine limitations.Assemblyprocessingtemperaturemustnotexceed325°C(<5seconds). 2. Productresistancetoelectrostaticdischarge(ESD)accordingtotheHBMismeasuredbysimulatingESDusingarapidavalanche energytest(RAET).TheRAETproceduresaredesignedtoapproximatethemaximumESDratingsshown. 3. Allproductsconformtothelistedminimumandmaximumspecificationsforelectricalandopticalcharacteristicswhenassembled andoperatedat20mAwithinthemaximumratingsshownabove.Efficiencydecreasesathighercurrents.Typicalvaluesgiven arewithintherangeofaveragevaluesexpectedbymanufacturerinlargequantitiesandareprovidedforinformationonly.All measurementsweremadeusinglampsinT-13/4packages(withHysolOS4000epoxyencapsulantandclearepoxydieattach). OpticalcharacteristicsmeasuredinanintegratingsphereusingIlluminanceE. |
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