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Subject to change without notice.

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CxxxEZ1400-Sxx000-2 Chip Diagram

FEATURES

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EZBright LED Technology

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800 mW min. @ 1000 mA - 450 & 460 nm

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Lambertian Radiation

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Conductive Epoxy, Solder Paste or Preforms, or Flux

Eutectic Attach

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Low Forward Voltage

● Dielectric Passivation across Epi Surface

APPLICATIONS

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General Illumination

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Aircraft

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Decorative Lighting

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Task Lighting

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Outdoor Illumination

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White LEDs

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Projection Displays

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Automotive

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Camera Flash

Data Sheet

CxxxEZ1400-Sxx000-2

Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN

materials with Cree’s proprietary optical design and device submount technology to deliver superior value for high-

intensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern.

Additionally, these LEDs are die-attachable with conductive epoxy, solder paste or solder preforms, as well as the flux

eutectic method. These vertically structured, low forward voltage LED chips are approximately 170 microns in height.

Cree’s EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad

range of applications such as general illumination, automotive lighting, projection displays and camera flash.

Top View

Bottom View

Die Cross Section

1380 x 1380 μm

Cathodes (-)

150 x 150 μm

Anode (+)

AuSn

Mesa (Junction)

1350 x 1350 μm

Thickness