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MTSF3N03HD Datasheet(PDF) 3 Page - Motorola, Inc

Part No. MTSF3N03HD
Description  SINGLE TMOS POWER MOSFET 3.8 AMPERES 30 VOLTS RDS(on) = 0.040 OHM
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MTSF3N03HD Datasheet(HTML) 3 Page - Motorola, Inc

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MTSF3N03HD
3
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(Cpk
≥ 2.0)
(1) (3)
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
30
27
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 24 Vdc, VGS = 0 Vdc)
(VDS = 24 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
1.0
25
µAdc
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(Cpk
≥ 2.0)
(3)
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
1.5
4.5
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(Cpk
≥ 2.0)
(3)
(VGS = 10 Vdc, ID = 3.8 Adc)
(VGS = 4.5 Vdc, ID = 1.9 Adc)
RDS(on)
35
45
40
60
m
Forward Transconductance (VDS = 10 Vdc, ID = 1.9 Adc)
gFS
2.0
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vdc V
0 Vdc
Ciss
420
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
190
Transfer Capacitance
f = 1.0 MHz)
Crss
65
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(V
15 Vd
I
3 7 Ad
td(on)
7.0
ns
Rise Time
(VDS = 15 Vdc, ID = 3.7 Adc,
tr
19
Turn–Off Delay Time
( DS
, D
,
VGS = 10 Vdc, RG = 6 Ω) (1)
td(off)
32
Fall Time
tf
36
Turn–On Delay Time
(V
15 Vd
I
1 9 Ad
td(on)
7.0
ns
Rise Time
(VDD = 15 Vdc, ID = 1.9 Adc,
tr
11
Turn–Off Delay Time
( DD
, D
,
VGS = 4.5 Vdc, RG = 6 Ω) (1)
td(off)
29
Fall Time
tf
23
Gate Charge
(V
24 Vd
I
3 7 Ad
QT
18.5
26
nC
(VDS = 24 Vdc, ID = 3.7 Adc,
Q1
1.4
( DS
, D
,
VGS = 10 Vdc)
Q2
5.5
Q3
7.1
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 3.7 Adc, VGS = 0 Vdc) (1)
(IS = 3.7 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
0.82
0.7
1.0
Vdc
Reverse Recovery Time
(I
3 7 Adc V
0 Vdc
trr
28
ns
(IS = 3.7 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs) (1)
ta
14
dIS/dt = 100 A/µs) (1)
tb
14
Reverse Recovery Storage Charge
QRR
0.028
µC
(1) Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Cpk =
Max limit – Typ
3 x SIGMA


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