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Subject to change without notice.

www.cree.com

FEATURES

• EZBrightPowerChipLEDRfPerformance

– 90mWmin.@150mA–450&460nm

– 75mWmin.@150mA-470nm

– 25mWmin.@150mA-527nm

• LambertianRadiation

• ConductiveEpoxy,SolderPasteorPreforms,

orFluxEutecticAttach

• LowForwardVoltage–3.5VTypicalat150mA

• SingleWireBondStructure

• MaximumDCForwardCurrent-200mA

● DielectricPassivationAcrossEpiSurface

APPLICATIONS

• GeneralIllumination

– Automobile

– Aircraft

– DecorativeLighting

– TaskLighting

– OutdoorIllumination

• WhiteLEDs

• CrosswalkSignals

• TelevisionBacklighting

Data Sheet

CxxxEZ400-Sxxx00-2

Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN

materialswithCree’sproprietaryopticaldesignanddevicetechnologytodeliversuperiorvalueforhigh-intensityLEDs.

TheopticaldesignmaximizeslightextractionefficiencyandenablesaLambertianradiationpattern.Additionally,these

LEDsaredieattachablewithconductiveepoxy,solderpasteorsolderpreforms,aswellasthefluxeutecticmethod.

Theseverticallystructured,lowforwardvoltageLEDchipsareapproximately170micronsinheight.Cree’sEZ™chips

aretestedforconformitytoopticalandelectricalspecifications.TheseLEDsareusefulinabroadrangeofapplications,

suchasgeneralillumination,automotivelightingandLCDbacklighting.

CxxxEZ400-Sxxx00 Chip Diagram

Top View

Bottom View

EZBrightLEDChip

380x380

t=170

μm

Backside

Metallization

GoldBondPad

112

μm

Die Cross Section

Anode(+);

3

μmAuSn

Cathode(-)

DielectricPassivation