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NST200F12 Datasheet(PDF) 2 Page - Nell Semiconductor Co., Ltd

Part # NST200F12
Description  Ultrafast Soft Recovery Diode, 100A 횞 2
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Manufacturer  NELLSEMI [Nell Semiconductor Co., Ltd]
Direct Link  http://www.nellsemi.com
Logo NELLSEMI - Nell Semiconductor Co., Ltd

NST200F12 Datasheet(HTML) 2 Page - Nell Semiconductor Co., Ltd

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ºC unless otherwise specified)
= 25
PARAMETER
SYMBOL
TEST CONDITIONS
V
-
= 200 A
IF
-
-
µA
-
-
1200
1.8
250
2
-
2
pF
120
ELECTRICAL SPECIFICATIONS
(TJ
Cathode to anode
breakdown voltage
VBR
= 100 µA
IR
Maximum forward voltage
= 100 A
IF
= 100 A, T
I
= 125 ºC
F
J
Maximum reverse
leakage current
IRM
Junction capacitance
2.0
2.5
-
-
ºC unless otherwise specified)
= 25
PARAMETER
SYMBOL
TEST CONDITIONS
ns
-
-
420
580
DYNAMIC RECOVERY CHARACTERISTICS PERLEG
(TJ
Reverse recovery time
IF = 1.0 A, dI /dt = -100 A/µs, V =30 V, T = 25°C
F
R
J
-
A
-
19
7
-
nC
-
5350
1250
-
Reverse recovery time
Reverse recovery time
trr
trr1
trr2
IRRM1
IRRM2
Qrr1
Qrr2
T = 125 ºC
J
T = 125 ºC
J
T = 125 ºC
J
T = 25 ºC
J
T = 25 ºC
J
T = 25 ºC
J
I = 100A
F
dI /dt = -200 A/µs
F
V =800 V
R
-
VFM
CT
V = 200V
R
T = 125°C, V = V rated
J
R
R
V = V rated
R
R
90
100
-
-
-
-
-
-
-
-
2.3
-
UNITS
MAX.
TYP.
MIN.
UNITS
MAX.
TYP.
MIN.
= 25 ºC unless otherwise specified)
PARAMETER
MIN.
TYP.
MAX.
UNITS
-
-
0.15
0.05
THERMAL - MECHANICAL SPECIFICATIONS
(TJ
Junction to case, single leg conducting
RthJC
0.3
-
-
-
30
-
Junction to case, both legs conducting
Case to sink, flat, greased surface
Weight
Mounting torque
RthCS
-
-
-
-
1.1
ºC/W
K/W
g
Nm
SYMBOL
65
I = 0.5A, I = 1.0A, I
= 250mA (RG#1 CKT)
F
R
RR
mA
SEMICONDUCTOR
NST200F12 / NST200F12-A RoHS
RoHS
Nell High Power Products
Page 2 of 5
www.nellsemi.com


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