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MTSF3203 Datasheet(PDF) 3 Page - Motorola, Inc

Part No. MTSF3203
Description  SINGLE TMOS POWER MOSFET 4.9 AMPERES 20 VOLTS RDS(on) = 0.05 OHM
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MTSF3203 Datasheet(HTML) 3 Page - Motorola, Inc

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MTSF3203
3
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(Cpk
≥ 2.0)
(1) (3)
(VGS = 0 Vdc, ID = 250 µAdc)
Temperature Coefficient (Positive)
V(BR)DSS
20
TBD
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
1.0
25
µAdc
Gate–Body Leakage Current (VGS = ± 12 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS(1)
Gate Threshold Voltage
(Cpk
≥ 2.0)
(3)
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
1.0
TBD
TBD
Vdc
mV/
°C
Static Drain–to–Source On–Resistance
(Cpk
≥ 2.0)
(3)
(VGS = 4.5 Vdc, ID = 4.9 Adc)
(VGS = 2.5 Vdc, ID = 3.9 Adc)
RDS(on)
TBD
TBD
40
50
m
Forward Transconductance (VDS = 10 Vdc, ID = 4.9 Adc)
gFS
2.0
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
16 Vdc V
0 Vdc
Ciss
TBD
pF
Output Capacitance
(VDS = 16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
TBD
Transfer Capacitance
f = 1.0 MHz)
Crss
TBD
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
(V
10 Vd
I
4 9 Ad
td(on)
TBD
ns
Rise Time
(VDS = 10 Vdc, ID = 4.9 Adc,
tr
TBD
Turn–Off Delay Time
( DS
, D
,
VGS = 4.5 Vdc, RG = 6 Ω) (1)
td(off)
TBD
Fall Time
tf
TBD
Turn–On Delay Time
(V
10 Vd
I
3 9 Ad
td(on)
TBD
ns
Rise Time
(VDD = 10 Vdc, ID = 3.9 Adc,
tr
TBD
Turn–Off Delay Time
( DD
, D
,
VGS = 2.5 Vdc, RG = 6 Ω) (1)
td(off)
TBD
Fall Time
tf
TBD
Gate Charge
(V
10 Vd
I
4 9 Ad
QT
TBD
TBD
nC
(VDS = 10 Vdc, ID = 4.9 Adc,
Q1
TBD
( DS
, D
,
VGS = 4.5 Vdc)
Q2
TBD
Q3
TBD
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 1.5 Adc, VGS = 0 Vdc) (1)
(IS = 1.5 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
TBD
TBD
1.0
Vdc
Reverse Recovery Time
(I
1 5 Adc V
0 Vdc
trr
TBD
ns
(IS = 1.5 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs) (1)
ta
TBD
dIS/dt = 100 A/µs) (1)
tb
TBD
Reverse Recovery Storage Charge
QRR
TBD
µC
(1) Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values.
Cpk =
Max limit – Typ
3 x SIGMA


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