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MTSF2P03HD Datasheet(PDF) 2 Page - Motorola, Inc

Part No. MTSF2P03HD
Description  SINGLE TMOS POWER MOSFET 2.7 AMPERES 30 VOLTS RDS(on) = 0.090 OHM
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MTSF2P03HD Datasheet(HTML) 2 Page - Motorola, Inc

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MTSF2P03HD
2
Motorola TMOS Power MOSFET Transistor Device Data
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Negative sign for P–Channel devices omitted for clarity
Rating
Symbol
Max
Unit
Drain–to–Source Voltage
VDSS
30
V
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
VDGR
30
V
Gate–to–Source Voltage — Continuous
VGS
± 20
V
1 inch SQ.
FR–4 or G–10 PCB
Figure 1 below
Steady State
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (1)
RTHJA
PD
ID
ID
IDM
70
1.79
14.29
4.1
3.2
32
°C/W
Watts
mW/
°C
A
A
A
Minimum
FR–4 or G–10 PCB
Figure 2 below
Steady State
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25°C
Linear Derating Factor
Drain Current — Continuous @ TA = 25°C
Continuous @ TA = 70°C
Pulsed Drain Current (1)
RTHJA
PD
ID
ID
IDM
160
0.78
6.25
2.7
2.1
21
°C/W
Watts
mW/
°C
A
A
A
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 10 Vdc, Peak IL = 3.0 Apk, L = 159 mH, RG = 25 W)
EAS
715
mJ
(1) Repetitive rating; pulse width limited by maximum junction temperature.
Figure 1. 1.0 Inch Square FR–4 or G–10 PCB
Figure 2. Minimum FR–4 or G–10 PCB


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