SI6435ADQ datasheet(1/10 Pages) VISHAY

Part #	SI6435ADQ

Description	P-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si6435ADQ

Document Number: 71104

S-80682-Rev. B, 31-Mar-08

www.vishay.com

1

P-Channel 30-V (D-S) MOSFET

FEATURES

•

Halogen-free

• TrenchFET® Power MOSFETs

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)ID (A)

- 30

0.030 at VGS = - 10 V

± 5.5

0.055 at VGS = - 4.5 V

± 4.1

Si6435ADQ

D

S

G

1

2

3

4

8

7

6

5

D

S

D

TSSOP-8

Top View

Ordering Information: Si6435ADQ-T1-GE3 (Lead (Pb)-free and Halogen-free)

S*

G

D

P-Channel MOSFET

* Source Pins 2, 3, 6 and 7

must be tied common.

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

Drain-Source Voltage

VDS

- 30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

a

TA = 25 °C

ID

± 5.5

± 4.7

A

TA = 70 °C

± 4.5

± 3.7

Pulsed Drain Current (10 µs Pulse Width)

IDM

± 30

Continuous Source Current (Diode Conduction)a

IS

- 1.35

- 0.95

Maximum Power Dissipationa

TA = 25 °C

PD

1.5

1.05

W

TA = 70 °C

1.0

0.67

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

≤ 10 s

RthJA

65

83

°C/W

Steady State

100

120

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

43

52

RoHS

COMPLIANT

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