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2SK3320-GR Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part # 2SK3320-GR
Description  TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3320-GR Datasheet(HTML) 1 Page - Toshiba Semiconductor

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2SK3320
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3320
For Low Noise Audio Amplifier Applications
• Two devices in a ultra super mini (five pins) package
• High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0)
• High breakdown voltage: VGDS = −50 V
• Super low noise: NF = 1.0dB (typ.)
(VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ)
• High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
−50
V
Gate current
IG
10
mA
Drain power dissipation
PD
(Note 1)
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking
Pin Assignment (top view)
Unit: mm
JEDEC
JEITA
TOSHIBA
2-2L1B
Weight: 6.2 mg (typ.)


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