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2SK3320-GR Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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2SK3320-GR Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page 2SK3320 2007-11-01 1 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3320 For Low Noise Audio Amplifier Applications • Two devices in a ultra super mini (five pins) package • High |Yfs|: |Yfs| = 15 mS (typ.) (VDS = 10 V, VGS = 0) • High breakdown voltage: VGDS = −50 V • Super low noise: NF = 1.0dB (typ.) (VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 kΩ) • High input impedance: IGSS = −1 nA (max) (VGS = −30 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 common) Characteristics Symbol Rating Unit Gate-drain voltage VGDS −50 V Gate current IG 10 mA Drain power dissipation PD (Note 1) 200 mW Junction temperature Tj 125 °C Storage temperature range Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Marking Pin Assignment (top view) Unit: mm JEDEC ― JEITA ― TOSHIBA 2-2L1B Weight: 6.2 mg (typ.) |
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