Alpha Industries, Inc. [781] 935-5150

• Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com

1

Specifications subject to change without notice. 2/00A

33–43 GHz GaAs MMIC Single

Balanced Down Converter Mixer

Features

I Low Conversion Loss, 6.5 dB

I Low LO Power Requirement, 6 dBm

I Wide IF Bandwidth, 0–5 GHz

I No DC Bias Required

Description

Alpha’s single balanced GaAs Schottky diode mixer has

a typical conversion loss of 6.5 dB at an LO power level

as low as 6.5 dBm over the band 33–43 GHz. The chip

uses Alpha’s proven Schottky diode technology, and is

based upon MBE layers for the highest uniformity and

repeatability. The diodes employ surface passivation to

ensure a rugged, reliable part with through-substrate via

holes and gold-based backside metallization to facilitate

an epoxy die attach process. All chips are screened for

DC diode parameters and lot samples are RF measured

to guarantee performance.

Dimensions indicated in mm.

All pads are

≥ 0.07 mm wide.

Chip thickness = 0.1 mm.

Chip Outline

Parameter

Symbol

Min.

Max.

Unit

RF and LO Frequency Range

33–43

GHz

IF Frequency Range

0–5

GHz

LO Power Level

6–18

dBm

6.5

dB

25

dB

15

dB

45

dB

5

dBm

Individual Diode Series Resistance

3.3

Ω

Electrical Specifications at 25°C

OHMIC ADDED 9-4-92

OHMIC ADDED 9-4-92

0.000

1.435

1.102

1.121

Absolute Maximum Ratings

Characteristic

Value

Operating Temperature

-55°C to +125°C

Storage Temperature

-65°C to +150°C

Total Input Power (RF + LO)

20 dBm

AM038S1-00

1. Not measured on a 100% basis.

2. Typical represents the median parameter value across the specified

frequency range for the median chip.