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AM038R1-00 Datasheet(PDF) 1 Page - Alpha Industries

Part No. AM038R1-00
Description  33-43 GHz GaAs MMIC Image Rejection Balanced Mixer
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Maker  ALPHA [Alpha Industries]
Homepage  http://www.alphaind.com
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AM038R1-00 Datasheet(HTML) 1 Page - Alpha Industries

   
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Alpha Industries, Inc. [781] 935-5150
• Fax [617] 824-4579 • Email sales@alphaind.com • www.alphaind.com
1
Specifications subject to change without notice. 2/00A
33–43 GHz GaAs MMIC
Image Rejection Balanced Mixer
Features
I Low Conversion Loss, 9 dB
I Low LO Power Requirement, 8 dBm
I Image Rejection, 18 dB
I No DC Bias Required
I Requires External IF 90° Hybrid
Description
Alpha’s image rejection balanced GaAs Schottky diode
mixer has a typical conversion loss of 9 dB at an LO power
level as low as 8 dBm over the band 33–43 GHz. An
external 90° IF hybrid is required to combine the IF1 and
IF2 signals at the desired IF frequency. The chip uses
Alpha’s proven Schottky diode technology, and is based
upon MBE layers for the highest uniformity and
repeatability. The diodes employ surface passivation to
ensure a rugged, reliable part with through-substrate via
holes and gold-based backside metallization to facilitate
an epoxy die attach process. All chips are screened for
DC diode parameters and lot samples are RF measured
to guarantee performance. This device is recommended
for applications requiring down conversion.
Dimensions indicated in mm.
All pads are
≥ 0.07 mm wide.
Chip thickness = 0.1 mm.
Chip Outline
Parameter
Symbol
Min.
Typ.2
Max.
Unit
RF and LO Frequency Range
FRF, FLO
33–43
GHz
IF Frequency Range
FIF
0–3
GHz
LO Power Level
PLO
8–14
dBm
Conversion Loss1
LC
9dB
Image Rejection1
IR
18
dB
RF and LO Return Loss1
RLRF, RLLO
12
dB
LO to RF Isolation1
ISOLO-RF
12
dB
LO to IF Isolation1
ISOLO-IF
23
dB
RF Input 1 dB Compression Point1
P1 dB
7
dBm
Individual Diode Series Resistance
RS
3.0
Electrical Specifications at 25°C
50OHMS
50OHMS
0.000
1.785
0.890
1.258
0.085
0.489
0.890
Absolute Maximum Ratings
Characteristic
Value
Operating Temperature
-55°C to +125°C
Storage Temperature
-65°C to +150°C
Total Input Power (RF + LO)
23 dBm
AM038R1-00
1. Not measured on a 100% basis.
2. Typical represents the median parameter value across the specified
frequency range for the median chip.


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